STTH3R06U ,TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIERFEATURES AND BENEFITSDO-201ADSTTH3R06■ Ultrafast switching■ Low forward voltage drop■ Low thermal r ..
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T62M0002A , Digital Sound Processor Embedded SRAM
T62M0002A , Digital Sound Processor Embedded SRAM
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T6668 ,-0.3 to +6.0V; V(in/out): -0.3 to +0.3V; CMOS LSI for voice recording and reproducing using the ADM systemELIE D " '3tP17iiYH1 DDELI‘ILIE Ell: .TOSB T6668_1||
TOSHIBA (UC/UP)
1. GENERAL
The T6668 is ..
STTH3R06-STTH3R06S-STTH3R06U
TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER
1/9
Table 1: Main Product Characteristics
STTH3R06TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER
September 2004 REV. 2
FEATURES AND BENEFITS Ultrafast switching Low forward voltage drop Low thermal resistance Low leakage current (platinium doping)
DESCRIPTIONThe STTH3R06, which is using ST Turbo 2 600V
technology, is specially suited for use in switching
power supplies, inverters and as a free wheeling
diode.
Table 2: Order Codes
STTH3R06
Table 3: Absolute Ratings (limiting values)
Table 4: Thermal Parameters
Table 5: Static Electrical CharacteristicsTo evaluate the conduction losses use the following equation: P = 1.03 x IF(AV) + 0.09 IF2 (RMS)
Table 6: Dynamic Characteristics
STTH3R063/9
Figure 1: Conduction losses versus average
current
Figure 2: Forward voltage drop versus forward
current
Figure 3: Relative variation of thermal impedance
junction ambient versus pulse duration (epoxy
printed circuit FR4, Lleads = 10mm, SCU=1cm2)
Figure 4: Peak reverse recovery current
versus dIF /dt (typical values)
Figure 5: Reverse recovery time versus dIF/dt
(typical values)
Figure 6: Reverse recovery charges versusF /dt (typical values)
STTH3R06
Figure 7: Softness factor versus dIF /dt (typical
values)
Figure 8: Relative variations of dynamic
parameters versus junction temperature
Figure 9: Transient peak forward voltage
versus dIF /dt (typical values)
Figure 10: Forward recovery time versus dIF/dt
(typical values)
Figure 11: Junction capacitance versus
reverse voltage applied (typical values)
Figure 12: Thermal resistance junction to
ambient versus copper surface under lead
(epoxy FR4, eCU =35µm) (DO-201AD)
STTH3R065/9
Figure 13: Thermal resistance junction to
ambient versus copper surface under lead
(epoxy FR4, eCU =35µm) (SMB / SMC)
Figure 14: Thermal resistance versus lead
length
STTH3R06
Figure 15: SMB Package Mechanical Data
Figure 16: SMB Foot Print Dimensions(in millimeters)
