STTH3R04U ,Ultrafast recovery diodeSTTH3R04Ultrafast recovery diode
STTH3R06 ,TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIERFEATURES AND BENEFITSDO-201ADSTTH3R06■ Ultrafast switching■ Low forward voltage drop■ Low thermal r ..
STTH3R06S ,TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIERSTTH3R06®TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIERTable 1: Main Product CharacteristicsI3 AF(AV)A KV ..
STTH3R06S ,TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIERSTTH3R06®TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIERTable 1: Main Product CharacteristicsI3 AF(AV)A KV ..
STTH3R06S ,TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIERFEATURES AND BENEFITSDO-201ADSTTH3R06■ Ultrafast switching■ Low forward voltage drop■ Low thermal r ..
STTH3R06U ,TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIERFEATURES AND BENEFITSDO-201ADSTTH3R06■ Ultrafast switching■ Low forward voltage drop■ Low thermal r ..
T620600W ,SNUBBERLESS TRIACFEATURESA An I =6A 2 1TRMSn V =V = 600VDRM RRMGn EXCELLENT SWITCHING PERFORMANCESn INSULATING VOLTA ..
T62M0002A , Digital Sound Processor Embedded SRAM
T62M0002A , Digital Sound Processor Embedded SRAM
T62M0002A-K , Digital Sound Processor Embedded SRAM
T62M99A , Digital Sound Processor Embedded 48K Bits SRAM
T6668 ,-0.3 to +6.0V; V(in/out): -0.3 to +0.3V; CMOS LSI for voice recording and reproducing using the ADM systemELIE D " '3tP17iiYH1 DDELI‘ILIE Ell: .TOSB T6668_1||
TOSHIBA (UC/UP)
1. GENERAL
The T6668 is ..
STTH3R04S-STTH3R04U
Ultrafast recovery diode
May 2008 Rev 1 1/10
STTH3R04Ultrafast recovery diode
Features Negligible switching losses Low forward and reverse recovery times High junction temperature
DescriptionThe STTH3R04 series uses ST's new 400 V
planar Pt doping technology. The STTH3R04 is
specially suited for switching mode base drive and
transistor circuits.
Packaged in axial and surface mount packages,
this device is intended for use in low voltage, high
frequency inverters, free wheeling and polarity
protection.
Table 1. Device summary
Characteristics STTH3R04
2/10
1 Characteristics
o evaluate the conduction losses use the following equation:
P = 0.9 x IF(AV) + 0.083 x IF2 (RMS)
Table 2. Absolute ratings (limiting values at 25 °C, unless otherwise specified) On infinite heatsink with 10 mm lead length
Table 3. Thermal parameters
Table 4. Static electrical characteristics Pulse test: tp = 5 ms, δ < 2 % Pulse test: tp = 380 µs, δ < 2 %
STTH3R04 Characteristics
3/10
Table 5. Dynamic characteristics (Tj = 25 °C unless otherwise stated)
Figure 1. Conduction losses versus
average forward current
Figure 2. Forward voltage drop versus
forward current
Figure 3. Relative variation of thermal
impedance junction to lead versus
pulse duration, DO-15 (epoxy FR4,
copper thickness = 35 µm)
Figure 4. Relative variation of thermal
impedance junction to ambient
versus pulse duration, DO-201AD
(epoxy FR4, copper
thickness = 35 µm)
Characteristics STTH3R04
4/10
Figure 5. Relative variation of thermal
impedance junction to ambient
versus pulse duration, SMB (epoxy
FR4, copper thickness = 35 µm)
Figure 6. Relative variation of thermal
impedance junction to ambient
versus pulse duration, SMC
Figure 7. Junction capacitance versus
reverse voltage applied
(typical values)
Figure 8. Reverse recovery charges versus F /dt (typical values)
Figure 9. Reverse recovery time versus
dIF/dt (typical values)
Figure 10. Peak reverse recovery current
versus dIF/dt (typical values)
STTH3R04 Characteristics
5/10
Figure 11. Relative variations of dynamic
parameters versus junction
temperature
Figure 12. Transient peak forward voltage
versus dIF/dt (typical values)
Figure 13. Forward recovery time versus
dIF/dt (typical values)
Figure 14. Thermal resistance versus
lead length, DO-15
Figure 15. Thermal resistance junction to
ambient versus copper surface
under each lead, DO-201AD (epoxy
FR4, copper thickness = 35 µm)
Figure 16. Thermal resistance versus lead
length, DO-201AD
Package information STTH3R04
6/10
Figure 17. Thermal resistance junction to ambient versus copper surface under
each lead, SMB, SMC (epoxy FR4, copper thickness = 35 µm)
2 Package information Epoxy meets UL94, V0 Cooling method: by conduction (C)
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at .
Table 6. DO201AD dimensions
