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T6668 ,-0.3 to +6.0V; V(in/out): -0.3 to +0.3V; CMOS LSI for voice recording and reproducing using the ADM systemELIE D " '3tP17iiYH1 DDELI‘ILIE Ell: .TOSB T6668_1||
TOSHIBA (UC/UP)
1. GENERAL
The T6668 is ..
STTH3R02-STTH3R02QRL-STTH3R02RL-STTH3R02S
Ultrafast recovery diode
April 2014 DocID12359 Rev 3 1/9
STTH3R02Ultrafast recovery diode
Datasheet - production data
Features Very low conduction losses Negligible switching losses Low forward and reverse recovery times High junction temperature
DescriptionThe STTH3R02 uses ST's new 200 V planar Pt
doping technology, and it is specially suited for
switching mode base drive and transistor circuits.
Packaged in DO-201AD, DO-15, and SMC, this
device is intended for use in low voltage, high
frequency inverters, free wheeling and polarity
protection.
Table 1. Device summary
Characteristics STTH3R022/9 DocID12359 Rev 3
1 Characteristics To evaluate the conduction losses use the following equation:
P = 0.68 x IF(AV) + 0.04 IF2 (RMS)
Table 2. Absolute ratings (limiting values at Tj = 25 °C, unless otherwise specified)
Table 3. Thermal parameters
Table 4. Static electrical characteristics Pulse test: tp = 5 ms, δ < 2 % Pulse test: tp = 380 µs, δ < 2 %
STTH3R02 Characteristics
Table 5. Dynamic characteristics
Figure 1. peak current versus duty cycle Figure 2. Forward voltage drop versus forward
current (typical values)
Figure 3. Forward voltage drop versus forward
current (maximum values)
Figure 4. Relative variation of thermal
impedance junction to ambient versus pulse
duration - DO-201AD
Characteristics STTH3R024/9 DocID12359 Rev 3
Figure 5. Relative variation of thermal
impedance junction to ambient versus pulse
duration - DO-15
Figure 6. Relative variation of thermal
impedance junction to ambient versus pulse
duration - SMC
Figure 7. Junction capacitance versus reverse
applied voltage (typical values)
Figure 8. Reverse recovery charges versus
dIF/dt (typical values)
Figure 9. Reverse recovery time versus dIF /dt
(typical values)
Figure 10. Peak reverse recovery current
versus dIF /dt (typical values)
DocID12359 Rev 3 5/9
STTH3R02 Ordering information scheme Ordering information scheme
Figure 15. Ordering information scheme
Figure 11. Dynamic parameters versus junction
temperature
Figure 12. Thermal resistance junction to
ambient versus copper surface under each lead
Figure 13. Thermal resistance versus copper
surface under each lead for SMC
Figure 14. Thermal resistance versus lead
length for DO-201AD package
Package information STTH3R026/9 DocID12359 Rev 3
3 Package information Epoxy meets UL94, V0 Cooling method: by conduction (C)
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: .
ECOPACK® is an ST trademark.
Table 6. DO-201AD dimensions
Table 7. DO-15 dimensions
