STTH3L06U ,TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIERapplications.Table 2: Order CodesPart Number MarkingSTTH3L06 STTH3L06STTH3L06RL STTH3L06STTH3L06B S ..
STTH3R02 ,Ultrafast recovery diodeSTTH3R02Ultrafast recovery diodeDatasheet - production dataTable 1. Device summaryA KI 3 AF(AV)V 20 ..
STTH3R02QRL ,Ultrafast recovery diodeFeatures• Very low conduction losses• Negligible switching losses• Low forward and reverse recovery ..
STTH3R02RL ,Ultrafast recovery diodeSTTH3R02Ultrafast recovery diodeDatasheet - production dataTable 1. Device summaryA KI 3 AF(AV)V 20 ..
STTH3R02S ,Ultrafast recovery diodeFeatures• Very low conduction losses• Negligible switching losses• Low forward and reverse recovery ..
STTH3R04S ,Ultrafast recovery diodeFeaturesA K■ Negligible switching losses■ Low forward and reverse recovery times■ High junction tem ..
T620600W ,SNUBBERLESS TRIACFEATURESA An I =6A 2 1TRMSn V =V = 600VDRM RRMGn EXCELLENT SWITCHING PERFORMANCESn INSULATING VOLTA ..
T62M0002A , Digital Sound Processor Embedded SRAM
T62M0002A , Digital Sound Processor Embedded SRAM
T62M0002A-K , Digital Sound Processor Embedded SRAM
T62M99A , Digital Sound Processor Embedded 48K Bits SRAM
T6668 ,-0.3 to +6.0V; V(in/out): -0.3 to +0.3V; CMOS LSI for voice recording and reproducing using the ADM systemELIE D " '3tP17iiYH1 DDELI‘ILIE Ell: .TOSB T6668_1||
TOSHIBA (UC/UP)
1. GENERAL
The T6668 is ..
STTH3L06S-STTH3L06U
TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER
1/10
Table 1: Main Product Characteristics
STTH3L06TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER
September 2004 REV. 2
FEATURES AND BENEFITS Ultrafast switching Low forward voltage drop Low thermal resistance Low leakage current (platinium doping)
DESCRIPTIONThe STTH3L06, which is using ST Turbo 2 600V
technology, is specially suited as boost diode in
discontinuous or critical mode power factor correc-
tions.
This device is intended for use as a free wheeling
diode in power supplies and other power switching
applications.
Table 2: Order Codes
STTH3L06
Table 3: Absolute Ratings (limiting values)
Table 4: Thermal Parameters
Table 5: Static Electrical CharacteristicsTo evaluate the conduction losses use the following equation: P = 0.89 x IF(AV) + 0.055 IF2 (RMS)
Table 6: Dynamic Characteristics
STTH3L063/10
Figure 1: Conduction losses versus average
current
Figure 2: Forward voltage drop versus forward
current
Figure 3: Relative variation of thermal impedance
junction ambient versus pulse duration (epoxy
printed circuit FR4, Lleads = 10mm, SCU=1cm2)
Figure 4: Peak reverse recovery current
versus dIF /dt (typical values)
Figure 5: Reverse recovery time versus dIF/dt
(typical values)
Figure 6: Reverse recovery charges versus dIF/
dt (typical values)
STTH3L06
Figure 7: Softness factor versus dIF /dt (typical
values)
Figure 8: Relative variations of dynamic
parameters versus junction temperature
Figure 9: Transient peak forward voltage
versus dIF /dt (typical values)
Figure 10: Forward recovery time versus dIF/dt
(typical values)
Figure 11: Junction capacitance versus
reverse voltage applied (typical values)
Figure 12: Thermal resistance junction to
ambient versus copper surface under lead
(epoxy FR4, eCU =35µm) (DO-201AD)
STTH3L065/10
Figure 13: Thermal resistance junction to
ambient versus copper surface under lead
(epoxy FR4, eCU =35µm) (SMB / SMC)
Figure 14: Thermal resistance junction to
ambient versus copper surface under tab
(epoxy FR4, eCU =35µm) (DPAK)
Figure 15: Thermal resistance versus lead length
STTH3L06
Figure 16: DPAK Package Mechanical Data
Figure 17: DPAK Foot Print Dimensions(in millimeters)
