STTH30R06W ,TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIERSTTH30R06®TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIERTable 1: Main Product CharacteristicsI30 AF(AV)V6 ..
STTH310 ,HIGH VOLTAGE ULTRAFAST RECTIFIERFEATURES AND BENEFITSn Low forward voltage dropn High reliabilityDO-201ADn High surge current capab ..
STTH310RL ,HIGH VOLTAGE ULTRAFAST RECTIFIERapplications.ABSOLUTE RATINGS (limiting values)Symbol Parameter Value UnitV Repetitive peak reverse ..
STTH310S ,HIGH VOLTAGE ULTRAFAST RECTIFIERELECTRICAL CHARACTERISTICSSymbol Parameter Tests conditions Min. Typ. Max. UnitI Reverse leakage cu ..
STTH310S ,HIGH VOLTAGE ULTRAFAST RECTIFIERapplications.ABSOLUTE RATINGS (limiting values)Symbol Parameter Value UnitV Repetitive peak reverse ..
STTH3L06 ,TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIERELECTRICAL CHARACTERISTICSSymbol Parameter Tests conditions Min. Typ. Max. UnitI Reverse leakage V ..
T620600W ,SNUBBERLESS TRIACFEATURESA An I =6A 2 1TRMSn V =V = 600VDRM RRMGn EXCELLENT SWITCHING PERFORMANCESn INSULATING VOLTA ..
T62M0002A , Digital Sound Processor Embedded SRAM
T62M0002A , Digital Sound Processor Embedded SRAM
T62M0002A-K , Digital Sound Processor Embedded SRAM
T62M99A , Digital Sound Processor Embedded 48K Bits SRAM
T6668 ,-0.3 to +6.0V; V(in/out): -0.3 to +0.3V; CMOS LSI for voice recording and reproducing using the ADM systemELIE D " '3tP17iiYH1 DDELI‘ILIE Ell: .TOSB T6668_1||
TOSHIBA (UC/UP)
1. GENERAL
The T6668 is ..
STTH30R06D-STTH30R06W
TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER
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Table 1: Main Product Characteristics
STTH30R06TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER
Table 3: Absolute Ratings (limiting values)October 2004 REV. 0C
FEATURES AND BENEFITS Ultrafast switching Low reverse current Low thermal resistance Reduces switching & conduction losses
DESCRIPTIONThe STTH30R06, which is using ST Turbo 2 600V
technology, is specially suited for use in switching
power supplies, and industrial applications, as
rectification and discontinuous mode PFC boost
diode.
Table 2: Order Codes
STTH30R06
Table 4: Thermal Resistance
Table 5: Static Electrical Characteristics
Pulse test: * tp = 5 ms, δ < 2%
** tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation: P = 1.07 x IF(AV) + 0.011 IF2 (RMS)
Table 6: Dynamic Characteristics
Figure 1: Conduction losses versus average
forward current
Figure 2: Forward voltage drop versus forward
current
STTH30R06
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Figure 3: Relative variation of thermal
impedance junction to case versus pulse
duration
Figure 4: Peak reverse recovery current versus
dIF/dt (typical values)
Figure 5: Reverse recovery time versus dIF/dt
(typical values)
Figure 6: Reverse recovery charges versus
dIF/dt (typical values)
Figure 7: Softness factor versus dIF/dt (typical
values)
Figure 8: Relative variations of dynamic
parameters versus junction temperature
3.0
STTH30R06
Figure 9: Transient peak forward voltage
versus dIF/dt (typical values)
Figure 10: Forward recovery time versus dIF/dt
(typical values)
Figure 11: Junction capacitance versus
reverse voltage applied (typical values)
800
STTH30R06
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Figure 12: DO-247 Package Mechanical Data
Figure 13: SOD-93 Package Mechanical Data
STTH30R06
Figure 14: TO-220AC Package Mechanical Data
Figure 15: DOP3I Package Mechanical Data