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T62M0002A , Digital Sound Processor Embedded SRAM
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T6668 ,-0.3 to +6.0V; V(in/out): -0.3 to +0.3V; CMOS LSI for voice recording and reproducing using the ADM systemELIE D " '3tP17iiYH1 DDELI‘ILIE Ell: .TOSB T6668_1||
TOSHIBA (UC/UP)
1. GENERAL
The T6668 is ..
STTH302S
HIGH EFFICIENCY ULTRAFAST DIODE
STTH302SApril 2002- Ed:1A
HIGH EFFICIENCY ULTRAFAST DIODE
The STTH302S, whichis using ST’s new 200V
planar technology,is specially suitedfor switching
mode base drive& transistor circuits.
The deviceis also intended for use asa free
wheeling diodein power supplies and other power
switching applications.
DESCRIPTION Very low conduction losses Negligible switching losses Low forward and reverse recovery times High junction temperature
FEATURES AND BENEFITS
ABSOLUTE RATINGS (limiting values)
MAIN PRODUCT CHARACTERISTICS
THERMAL PARAMETERS
STTH302SPulse test:*tp= 5ms,δ <2%tp= 380μs,δ <2% evaluate the maximum conduction losses use the following equation:
P=0.60xIF(AV)+ 0.05IF2 (RMS)
STATIC ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
STTH302S
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 (W)F(AV)
Fig.1: Average forward power dissipation versus
average forward current.
3.5 25 50 75 100 125 150 175 (A)F(AV)
Fig.2: Average forward current versus ambient
temperature(δ= 0.5)
1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
Zth(j-a)/Rth(j-a)
Fig.3: Relative variationof thermal impedance
junction ambient versus pulse duration (Printed
circuit board epoxy FR4).
100 10 100 1000
C(pF)
Fig. 5: Junction capacitance versus reverse
voltage applied (typical values).
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 (A)FM
Fig.4: Forward voltage drop versus forward
current.
100 10 100 1000 (ns)RR
Fig.6: Reverse recovery time versus dIF/dt (90%
confidence).
STTH302S
6.0 10 100 1000 (A)RM
Fig. 7: Peak reverse recovery current versus
dIF/dt (90% confidence).
100 10 100 1000 (nC)RR
Fig.8: Reverse recovery charges versus dIF/dt
(90% confidence).
3.5 50 75 100 125 150 175;t;Q [Tj] / I;t ;Q [Tj = 25°C]RMRR RR RMRR RR
Fig.9: Relative variationsof dynamic parameters
versus junction temperature.
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Rth(j-a)(°C/W)
Fig. 10: Thermal resistance junctionto ambient
versus copper surface under each lead (epoxy
FR4,e= 35μm).
STTH302SInformationfurnishedisbelievedto beaccurateand reliable. However, STMicroelectronics assumes noresponsibilityfortheconsequencesof
useof such informationnor forany infringement ofpatentsor otherrightsofthirdpartieswhich may result fromitsuse.No licenseis grantedby
implicationor otherwise under any patentor patent rightsof STMicroelectronics. Specifications mentionedinthis publicationare subjectto
change without notice. This publication supersedesand replacesall information previously supplied.
STMicroelectronics productsarenot authorizedforuseas critical componentsinlife support devicesor systems without express writtenap-
provalof STMicroelectronics.
TheST logoisa registered trademarkof STMicroelectronics 2002 STMicroelectronics- Printedin Italy-All rights reserved.
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FOOTPRINT Epoxy meets UL 94,V0
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