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Partno	Mfg	Dc	Qty	Available	Descript
STTH3003CW \|STTH3003CW	ST	N/a	4000	avai	HIGH FREQUENCY SECONDARY RECTIFIER

STTH3003CW ,HIGH FREQUENCY SECONDARY RECTIFIERFEATURES AND BENEFITSTO-247COMBINES HIGHEST RECOVERY ANDREVERSE VOLTAGE PERFORMANCEULTRA-FAST, SOFT ..
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T620600W ,SNUBBERLESS TRIACFEATURESA An I =6A 2 1TRMSn V =V = 600VDRM RRMGn EXCELLENT SWITCHING PERFORMANCESn INSULATING VOLTA ..
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T6668 ,-0.3 to +6.0V; V(in/out): -0.3 to +0.3V; CMOS LSI for voice recording and reproducing using the ADM systemELIE D " '3tP17iiYH1 DDELI‘ILIE Ell: .TOSB T6668_1|| TOSHIBA (UC/UP) 1. GENERAL The T6668 is ..

STTH3003CW
HIGH FREQUENCY SECONDARY RECTIFIER
STTH3003CW
October 1999 - Ed: 5A
HIGH FREQUENCY SECONDARY RECTIFIER
Dual center tap Fast Recovery Epitaxial Diodes
suited for Switch Mode Power Supply and high
frequency DC to DC converters.
Packaged in TO-247 this device is intended for
secondary rectification.
DESCRIPTION
COMBINES HIGHEST RECOVERY AND
REVERSE VOLTAGE PERFORMANCE
ULTRA-FAST, SOFT AND NOISE-FREE
RECOVERY
FEATURES AND BENEFITS
ABSOLUTE RATINGS (limiting values, per diode)
MAJOR PRODUCT CHARACTERISTICS
1/5
Pulse test : * tp = 5 ms, δ < 2 %
** tp = 380 μs, δ < 2%
To evaluate the maximum conduction losses use the following equation :
P = 0.75 x IF(AV) + 0.017 IF2 (RMS)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
THERMAL RESISTANCES
RECOVERY CHARACTERISTICS
STTH3003CW
2/5
02468 10 12 14 16 18 200
P1(W)
Fig. 1: Conduction losses versus average current
(per diode).
0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.501
IFM(A)
Fig. 2: Forward voltage drop versus forward
current (maximum values, per diode).
1E-3 1E-2 1E-1 1E+00.0
Zth(j-c)/Rth(j-c)
Fig. 3: Relative variation of thermal impedance
junction to case versus pulse duration. 50 100 150 200 250 300 350 400 450 5000
trr(ns)
Fig. 5: Reverse recovery time versus dIF/dt (90%
confidence, per diode). 50 100 150 200 250 300 350 400 450 5000
IRM(A)
Fig. 4: Peak reverse recovery current versus
dIF/dt (90% confidence, per diode). 50 100 150 200 250 300 350 400 450 5000.00
S factor
Fig. 6: Softness factor versus dIF/dt (typical
values, per diode).
STTH3003CW
3/5
50 75 100 1250.0Fig. 7: Relative variation of dynamic parameters
versus junction temperature (reference: Tj = 125°C). 50 100 150 200 250 300 350 400 450 5000
VFP(V)
Fig. 8: Transient peak forward voltage versus
dIF/dt (90% confidence, per diode). 50 100 150 200 250 300 350 400 450 5000
tfr(ns)
Fig. 9: Forward recovery time versus dIF/dt (90%
confidence, per diode).
STTH3003CW
4/5

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