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STTH3002CSTN/a30avaiHIGH EFFICIENCY ULTRAFAST DIODE
STTH3002CGSTN/a6000avaiHIGH EFFICIENCY ULTRAFAST DIODE
STTH3002CG-TR |STTH3002CGTRSTN/a2583avaiHIGH EFFICIENCY ULTRAFAST DIODE
STTH3002CTSTMN/a10avaiHIGH EFFICIENCY ULTRAFAST DIODE
STTH3002CWSTN/a1599avaiHIGH EFFICIENCY ULTRAFAST DIODE


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STTH3002C-STTH3002CG-STTH3002CG-TR-STTH3002CT-STTH3002CW
HIGH EFFICIENCY ULTRAFAST DIODE
STTH3002C
February 2004- Ed:1
HIGH EFFICIENCY ULTRAFAST DIODE
Dual center tap rectifier suited for Switch Mode
Power Supplies and High frequency DCto DC
converters.
Packaged in TO-220AB,D2 PAK, TO-247 and2 PAK, this deviceis intended for usein low
voltage, high frequency inverters, free wheeling
and polarity protection applications.
DESCRIPTION
Suitedfor SMPS Low losses Low forward and reverse recovery times High surge current capability High junction temperature Low leakage current
FEATURES AND BENEFITS
ABSOLUTE RATINGS
(limiting values)
MAIN PRODUCT CHARACTERISTICS
STTH3002C
Pulse test:*tp= 5ms,δ <2%tp= 380µs,δ <2% evaluate the maximum conduction losses use the following equation:= 0.69x IF(AV)+ 0.01IF2 (RMS)
STATIC ELECTRICAL CHARACTERISTICS

When the diodes1 and2 are used simultaneously:Tj (diode1)= P(diode1)x Rth(j-c) (per diode)+ P(diode2)x Rth(c)
THERMAL PARAMETERS
DYNAMIC ELECTRICAL CHARACTERISTICS
STTH3002C
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 (A)M
Fig.1:
Peak current versus duty cycle (per diode).
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 (A)FM
Fig. 2-1:
Forward voltage drop versus forward
current (typical values, per diode).
1.E-03 1.E-02 1.E-01 1.E+00
Z/Rth(j-c) th(j-c)
Fig.3:
Relative variationof thermal impedance
junctionto case versus pulse duration.
1000 50 100 150 200
C(pF)
Fig. 4:
Junction capacitance versus reverse
voltage applied (typical values, per diode).
250 100 1000 (nC)rr
Fig.5:
Reverse recovery charges versus dIF/dt
(typical values, per diode).
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 (A)FM
Fig. 2-2:
Forward voltage drop versus forward
current (maximum values, per diode).
STTH3002C 100 1000
t(ns)rr
Fig. 6:
Reverse recovery time versus dIF/dt
(typical values, per diode). 100 1000
I(A)RM
Fig.7:
Peak reverse recovery current versus dIF/dt
(typical values, per diode).
1.4 50 75 100 125 150
Qrr;I [T]/Qrr;I [T=125°C]RMj RMj
Fig. 8:
Dynamic parameters versus junction
temperature.
02468 10 12 14 16 18 20 (°C/W)th(j-a)
Fig. 9:
Thermal resistance junctionto ambient
versus copper surface under tab (Epoxy printed
circuit board FR4, eCU: 35µm)forD2 PAK.
STTH3002C
PACKAGE MECHANICAL DATA
2 PAK
FOOTPRINT DIMENSIONS
(in millimeters)
STTH3002C
PACKAGE MECHANICAL DATA
2 PAK
PACKAGE MECHANICAL DATA

TO-247
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