STTH2R06S ,TURBO 2 Ultrafast High Voltage RectifierFeaturesA K■ Very low conduction losses■ Negligible switching losses■ Low forward and reverse recov ..
STTH2R06U ,HIGH EFFICIENCY ULTRAFAST DIODEFEATURES AND BENEFITS■ Very low conduction losses■ Negligible switching losses DO-41STTH2R06■ Low f ..
STTH3002C ,HIGH EFFICIENCY ULTRAFAST DIODEFEATURES AND BENEFITSA2KKA1A1■ Suited for SMPS2TO-220AB I PAK■ Low lossesSTTH3002CT STTH3002CR■ Low ..
STTH3002CG ,HIGH EFFICIENCY ULTRAFAST DIODEapplications.ABSOLUTE RATINGS (limiting values)Symbol Parameter Value UnitV Repetitive peak reverse ..
STTH3002CG-TR ,HIGH EFFICIENCY ULTRAFAST DIODE®STTH3002CHIGH EFFICIENCY ULTRAFAST DIODEMAIN PRODUCT CHARACTERISTICSA1I 2 x 15AF(AV)KA2V 200 VRRMT ..
STTH3002CT ,HIGH EFFICIENCY ULTRAFAST DIODEELECTRICAL CHARACTERISTICSSymbol Parameter Tests conditions Min. Typ. Max. UnitI * Reverse leakage ..
T620600W ,SNUBBERLESS TRIACFEATURESA An I =6A 2 1TRMSn V =V = 600VDRM RRMGn EXCELLENT SWITCHING PERFORMANCESn INSULATING VOLTA ..
T62M0002A , Digital Sound Processor Embedded SRAM
T62M0002A , Digital Sound Processor Embedded SRAM
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T6668 ,-0.3 to +6.0V; V(in/out): -0.3 to +0.3V; CMOS LSI for voice recording and reproducing using the ADM systemELIE D " '3tP17iiYH1 DDELI‘ILIE Ell: .TOSB T6668_1||
TOSHIBA (UC/UP)
1. GENERAL
The T6668 is ..
STTH2R06S
TURBO 2 Ultrafast High Voltage Rectifier
December 2009 Doc ID 10757 Rev 4 1/10
STTH2R06High efficiency ultrafast diode
Features Very low conduction losses Negligible switching losses Low forward and reverse recovery times High junction temperature
DescriptionThe STTH2R06 uses ST Turbo 2 600 V planar Pt
doping technology. It is specially suited for
switching mode base drive and transistor circuits.
Packaged in axial, SMA, SMB and SMC, this
device is intended for use in high frequency
inverters, free wheeling and polarity protection.
Table 1. Device summary
Characteristics STTH2R06
2/10 Doc ID 10757 Rev 4
1 Characteristics
o evaluate the maximum conduction losses use the following equation:
P = 1 x IF(AV) + 0.125 IF2 (RMS)
Table 2. Absolute ratings (limiting values)
Table 3. Thermal resistance
Table 4. Static electrical characteristics Pulse test: tp = 5 ms, δ < 2 % Pulse test: tp = 380 µs, δ < 2 %
STTH2R06 Characteristics
Table 5. Dynamic electrical characteristics
Figure 1. Conduction losses versus average
forward current
Figure 2. Forward voltage drop versus
forward current
Figure 3. Relative variation of thermal
impedance junction to case versus
pulse duration
Figure 4. Peak reverse recovery current
versus dIF/dt (typical values)
Characteristics STTH2R06
4/10 Doc ID 10757 Rev 4
Figure 5. Reverse recovery time versus dIF/dt
(typical values)
Figure 6. Reverse recovery charges versus
dIF/dt (typical values)
Figure 7. Relative variations of dynamic
parameters versus junction
temperature
Figure 8. Transient peak forward voltage
versus dIF/dt (typical values)
Figure 9. Forward recovery time versus dIF/dt
(typical values)
Figure 10. Junction capacitance versus
reverse voltage applied
(typical values)
STTH2R06 Characteristics
Doc ID 10757 Rev 4 5/10
Figure 11. Thermal resistance junction to
ambient versus copper surface
under each lead
Figure 12. Thermal resistance versus lead
length (DO-41)
Package information STTH2R06
6/10 Doc ID 10757 Rev 4
2 Package information Epoxy meets UL 94, V0 Band indicates cathode Bending method (DO-41): see Application note AN1471
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOP ACK®
specifications, grade definitions and product status are available at: .
ECOPACK® is an ST trademark.
Table 6. DO-41 (plastic) dimensions
Table 7. SMA dimensions
