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T6668 ,-0.3 to +6.0V; V(in/out): -0.3 to +0.3V; CMOS LSI for voice recording and reproducing using the ADM systemELIE D " '3tP17iiYH1 DDELI‘ILIE Ell: .TOSB T6668_1||
TOSHIBA (UC/UP)
1. GENERAL
The T6668 is ..
STTH2R02A-STTH2R02U
Ultrafast recovery diode
October 2006 Rev 2 1/9
STTH2R02Ultrafast recovery diode
Main product characteristics
Features and benefits Very low conduction losses Negligible switching losses Low forward and reverse recovery times High junction temperature
DescriptionThe STTH2R02 uses ST's new 200 V planar Pt
doping technology, and it is specially suited for
switching mode base drive and transistor circuits.
Packaged in DO-15, SMA, and SMB, this device
is intended for use in low voltage, high frequency
inverters, free wheeling and polarity protection.
Order codes
Characteristics STTH2R022/9
1 Characteristics To evaluate the conduction losses use the following equation:
P = 0.68 x I F(AV) + 0.06 IF2 (RMS)
Table 1. Absolute ratings (limiting values at Tj = 25° C, unless otherwise specified) On infinite heatsink with 10 mm lead length
Table 2. Thermal parameters
Table 3. Static electrical characteristics Pulse test: tp = 5 ms, δ < 2 % Pulse test: tp = 380 µs, δ < 2 %
STTH2R02 Characteristics 3/9
Table 4. Dynamic characteristics
Figure 1. Peak current versus duty cycle Figure 2. Forward voltage drop versus
forward current (typical values)
Figure 3. Forward voltage drop versus
forward current (maximum values)
Figure 4. Relative variation of thermal
impedance junction to case versus
pulse duration (SMA)
Characteristics STTH2R024/9
Figure 5. Relative variation of thermal
impedance junction to case versus
pulse duration (SMB)
Figure 6. Relative variation of thermal
impedance junction to case versus
pulse duration (DO-15)
Figure 7. Junction capacitance versus
reverse applied voltage (typical
values)
Figure 8. Reverse recovery charges versus
dIF/dt (typical values)
Figure 9. Reverse recovery time versus dIF /dt
(typical values)
Figure 10. Peak reverse recovery current
versus dIF /dt (typical values)
STTH2R02 Ordering information scheme 5/9
L
Ordering information scheme
Figure 11. Dynamic parameters versus
junction temperature
Figure 12. Thermal resistance, junction to
ambient, versus copper surface
under each lead - SMA/SMB
(epoxy FR4, ecu = 35 µm)
Figure 13. Thermal resistance, junction to
ambient, versus copper surface
under each lead DO-15
(epoxy FR4, ecu = 35 µm)
Package information STTH2R026/9
3 Package informationEpoxy meets UL94, V0
Table 5. DO-15 Dimensions
Figure 14. SMA footprint (dimensions in mm)
Table 6. SMA dimensions
