STTH2L06 ,HIGH EFFICIENCY ULTRAFAST DIODEFEATURES AND BENEFITS■ Very low conduction losses■ Negligible switching losses DO-41STTH2L06■ Low f ..
STTH2L06A ,HIGH EFFICIENCY ULTRAFAST DIODESTTH2L06®HIGH EFFICIENCY ULTRAFAST DIODETable 1: Main Product CharacteristicsI2 AF(AV)A KV600 VRRMT ..
STTH2L06A ,HIGH EFFICIENCY ULTRAFAST DIODEFEATURES AND BENEFITS■ Very low conduction losses■ Negligible switching losses DO-41STTH2L06■ Low f ..
STTH2L06U ,HIGH EFFICIENCY ULTRAFAST DIODESTTH2L06®HIGH EFFICIENCY ULTRAFAST DIODETable 1: Main Product CharacteristicsI2 AF(AV)A KV600 VRRMT ..
STTH2R02A ,Ultrafast recovery diodeSTTH2R02Ultrafast recovery diodeMain product characteristicsI 2 AF(AV)V 200 VRRMT (max) 175° Cj A K ..
STTH2R02U ,Ultrafast recovery diodeFeatures and benefitsDO-15K■ Very low conduction lossesSTTH2R02Q■ Negligible switching losses■ Low ..
T620600W ,SNUBBERLESS TRIACFEATURESA An I =6A 2 1TRMSn V =V = 600VDRM RRMGn EXCELLENT SWITCHING PERFORMANCESn INSULATING VOLTA ..
T62M0002A , Digital Sound Processor Embedded SRAM
T62M0002A , Digital Sound Processor Embedded SRAM
T62M0002A-K , Digital Sound Processor Embedded SRAM
T62M99A , Digital Sound Processor Embedded 48K Bits SRAM
T6668 ,-0.3 to +6.0V; V(in/out): -0.3 to +0.3V; CMOS LSI for voice recording and reproducing using the ADM systemELIE D " '3tP17iiYH1 DDELI‘ILIE Ell: .TOSB T6668_1||
TOSHIBA (UC/UP)
1. GENERAL
The T6668 is ..
STTH2L06-STTH2L06A-STTH2L06U
HIGH EFFICIENCY ULTRAFAST DIODE
1/8
Table 1: Main Product Characteristics
STTH2L06HIGH EFFICIENCY ULTRAFAST DIODE
Table 3: Absolute Ratings (limiting values)September 2004 REV. 1
FEATURES AND BENEFITS Very low conduction losses Negligible switching losses Low forward and reverse recovery times High junction temperature
DESCRIPTIONThe STTH2L06 is using ST Turbo 2 600V planar
Pt doping technology. It is specially suited for
SMPS and base drive transistor circuits.
Packaged in axial, SMA and SMB, this device is
intended for use in high frequency inverters, free
wheeling and polarity protection.
Table 2: Order Codes
STTH2L06
Table 4: Thermal Resistance
Table 5: Static Electrical CharacteristicsPulse test: * tp = 5 ms, δ < 2%
** tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation: P = 0.89 x IF(AV) + 0.08 IF2 (RMS)
Table 6: Dynamic Characteristics
STTH2L063/8
Figure 1: Conduction losses versus average
forward current
Figure 2: Forward voltage drop versus forward
current
Figure 3: Relative variation of thermal
impedance junction to case versus pulse
duration (SMA - SCU = 1cm2)
Figure 4: Relative variation of thermal
impedance junction to case versus pulse
duration (SMB - SCU = 1cm2)
Figure 5: Relative variation of thermal
impedance junction to case versus pulse
duration (DO-41)
Figure 6: Peak reverse recovery current versusF /dt (typical values)
STTH2L06
Figure 7: Reverse recovery time versus dIF/dt
(typical values)
Figure 8: Reverse recovery charges versus
dIF/dt (typical values)
Figure 9: Relative variations of dynamic
parameters versus junction temperature
Figure 10: Transient peak forward voltage
versus dIF /dt (typical values)
Figure 11: Forward recovery time versus dIF/dt
(typical values)
Figure 12: Junction capacitance versus
reverse voltage applied (typical values)
STTH2L065/8
Figure 15: SMA Package Mechanical Data
Figure 13: Thermal resistance junction to
ambient versus copper surface under tab
(epoxy FR4, eCU =35µm) (SMA / SMB)
Figure 14: Thermal resistance versus lead
lengh (DO-41)
Figure 16: SMA Foot Print Dimensions(in millimeters)
STTH2L06
Figure 17: SMB Package Mechanical Data
Figure 18: SMB Foot Print Dimensions(in millimeters)
