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T62M0002A , Digital Sound Processor Embedded SRAM
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T6668 ,-0.3 to +6.0V; V(in/out): -0.3 to +0.3V; CMOS LSI for voice recording and reproducing using the ADM systemELIE D " '3tP17iiYH1 DDELI‘ILIE Ell: .TOSB T6668_1||
TOSHIBA (UC/UP)
1. GENERAL
The T6668 is ..
STTH208-STTH208U
HIGH VOLTAGE ULTRAFAST RECTIFIER
STTH208/UJanuary 2003- Ed:1
HIGH VOLTAGE ULTRAFAST RECTIFIER
The STTH208, whichis using ST ultrafast high
voltage planar technology,is specially suited for
free-wheeling, clamping, snubbering, demagneti-
zationin power supplies and other power switching
applications.
DESCRIPTION Low forward voltage drop High reliability High surge current capability Soft switchingfor reduced EMI disturbances Planar technology
FEATURES AND BENEFITS
ABSOLUTE RATINGS (limiting values)
MAIN PRODUCT CHARACTERISTICS
STTH208/U evaluate the maximum conduction losses use the following equation:
P=1.05xIF(AV) +0.10xIF2 (RMS)
STATIC ELECTRICAL CHARACTERISTICS
THERMAL PARAMETERS
DYNAMIC ELECTRICAL CHARACTERISTICS
STTH208/U
P(W)0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
Fig.1: Conduction losses versus averagecurrent.
(A)FM0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 2.75 3.00
Fig. 2: Forward voltage drop versus forward
current.
Z/Rth(j-c) th(j-c)1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
Fig. 3-1: Relative variationof thermal impedance
junction ambient versus pulse duration (epoxy
FR4, Lleads= 10mm) (DO-15).
Z/Rth(j-c) th(j-c)1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
Fig. 3-2: Relative variationof thermal impedance
junction ambient versus pulse duration (epoxy
FR4, S=1cm2) (SMB).
(°C/W)th(j-a)0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Fig.4: Thermal resistance junctionto ambient
versus copper surface under each lead (epoxy
printed circuit board FR4, copper thickness:
35μm).
STTH208/U
PACKAGE MECHANICAL DATASMB
FOOTPRINT (in millimeters)
STTH208/U
PACKAGE MECHANICAL DATADO-15 Epoxy meets UL 94,V0
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