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STTH2003CFP-STTH2003CG-TR-STTH2003CR
HIGH FREQUENCY SECONDARY RECTIFIER
STTH2003CT/CG/CF/CR/CFPAugust 2003- Ed:7D
HIGH FREQUENCY SECONDARY RECTIFIER
Dual center tap Fast Recovery Epitaxial Diodes
suited for Switch Mode Power Supply and high
frequency DC/DC converters.
Packaged in TO-220AB, ISOWATT220AB,
TO-220FPAB,I2 PAK orD2 PAK, this deviceis
especially intended for secondary rectification.
DESCRIPTION COMBINES HIGHEST RECOVERY AND
REVERSE VOLTAGE PERFORMANCE ULTRA-FAST, SOFT AND NOISE-FREE
RECOVERY INSULATED PACKAGES: ISOWATT220AB,
TO-220FPAB
Electric insulation: 2000VDC
Capacitance: 12pF
FEATURES AND BENEFITS
ABSOLUTE RATINGS (limiting values, per diode)
MAJOR PRODUCT CHARACTERISTICS
STTH2003CT/CG/CF/CR/CFPPulse test:* tp=5ms,δ <2%tp= 380 μs,δ <2% evaluate the maximum conduction losses use the following equation:
P=0.75xIF(AV)+ 0.025IF2 (RMS)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
THERMAL RESISTANCES
RECOVERY CHARACTERISTICS
STTH2003CT/CG/CF/CR/CFP 4 6 8 10 120
P1(W)
Fig.1: Conduction losses versus average current
(per diode).
0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 2.75 3.001
IFM(A)
Fig. 2: Forward voltage drop versus forward
current (maximum values, per diode).
1E-3 1E-2 1E-10.0
Zth(j-c)/Rth(j-c)
Fig. 3-1: Relative variationof thermal impedance
junctionto case versus pulse duration (TO-220AB2 PAK/I2 PAK). 50 100 150 200 250 300 350 400 450 5000
trr(ns)
Fig.5: Reverse recovery time versus dIF/dt (90%
confidence, per diode). 50 100 150 200 250 300 350 400 450 5000
IRM(A)
Fig.4: Peak reverse recovery current versus
dIF/dt (90% confidence, per diode).
1E-2 1E-1 1E+00.0
Zth(j-c)/Rth(j-c)
Fig. 3-2: Relative variationof thermal impedance
junction to case versus pulse duration
(ISOWATT220AB).
STTH2003CT/CG/CF/CR/CFP 50 75 100 1250.0
Fig.7: Relative variationof dynamic parameters
versus junction temperature(reference:Tj= 125°C). 50 100 150 200 250 300 350 400 450 5000
(V)FP
Fig.8: Transient peak forward voltage versus
dIF/dt (90% confidence, per diode) (TO-220AB). 50 100 150 200 250 300 350 400 450 5000
500
(ns)fr
Fig.9: Forward recovery time versus dIF/dt (90%
confidence, per diode). 5 10 15 20 25 30 35 400
Rth(j-a) (°C/W)
Fig. 10: Thermal resistance junctionto ambient
versus copper surface under tab (Epoxy printed
circuit board FR4, copper thickness: 35μm)2 PAK). 50 100 150 200 250 300 350 400 450 5000.00
S factor
Fig.6: Softness factor (tb/ta) versus dIF/dt (typical
values, per diode).
