STTH1R06U ,TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIERSTTH1R06®TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIERTable 1: Main Product CharacteristicsI1 AF(AV)V600 ..
STTH20002TV1 ,TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIERapplications.ABSOLUTE RATINGS (limiting values, per diode)Symbol Parameter Value UnitV Repetitive p ..
STTH20003TV1 ,HIGH FREQUENCY SECONDARY RECTIFIERFEATURES AND BENEFITSCOMBINES HIGHEST RECOVERY AND A2REVERSE VOLTAGE PERFORMANCEULTRAFAST, SOFT AND ..
STTH20004TV1 ,Ultrafast high voltage rectifierapplications, as an output Table 1. Device summaryrectification diode.Symbol ValueI Up to 2 x 120 A ..
STTH2002CFP ,HIGH EFFICIENCY ULTRAFAST DIODEFEATURES AND BENEFITSA2A2KK■ Suited for SMPSA1A12■ Low lossesTO-220AB I PAK■ Low forward and revers ..
STTH2002CG-TR ,HIGH EFFICIENCY ULTRAFAST DIODEapplications.ABSOLUTE RATINGS (limiting values)Symbol Parameter Value UnitV Repetitive peak reverse ..
T6 ,1/4 in Multiturn Fully Sealed Container, Military and Professional GradeFEATURES• Military and professional grade• 0.25 Watt at 85°C• CECC 41 101-005 (A, B, C, D)• MIL-R-2 ..
T620600W ,SNUBBERLESS TRIACFEATURESA An I =6A 2 1TRMSn V =V = 600VDRM RRMGn EXCELLENT SWITCHING PERFORMANCESn INSULATING VOLTA ..
T62M0002A , Digital Sound Processor Embedded SRAM
T62M0002A , Digital Sound Processor Embedded SRAM
T62M0002A-K , Digital Sound Processor Embedded SRAM
T62M99A , Digital Sound Processor Embedded 48K Bits SRAM
STTH1R06-STTH1R06A-STTH1R06RL-STTH1R06U
TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER
1/9
Table 1: Main Product Characteristics
STTH1R06TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER
Table 3: Absolute Ratings (limiting values)February 2005 REV. 3
FEATURES AND BENEFITS Ultrafast switching Low reverse recovery current Low thermal resistance Reduces switching & conduction losses
DESCRIPTIONThe STTH1R06, which is using ST Turbo 2 600V
technology, is specially suited as boost diode in
power factor correction circuitry.
The device is also intended for use as a free
wheeling diode in power supplies and other power
switching applications.
Table 2: Order Codes
STTH1R06
Table 4: Thermal Resistance
Table 5: Static Electrical CharacteristicsTo evaluate the conduction losses use the following equation: P = 1.03 x I F(AV) + 0.27 IF2 (RMS)
Table 6: Dynamic Characteristics
Note 1: Rth(j-a) is measured with a copper area S = Scm2 (see figure12).
STTH1R063/9
Figure 1: Conduction losses versus average
forward current
Figure 2: Forward voltage drop versus forward
current
Figure 3: Relative variation of thermal
impedance junction to case versus pulse
duration (DO-41)
Figure 4: Relative variation of thermal
impedance junction to case versus pulse
duration (SMA)
Figure 5: Relative variation of thermal
impedance junction to case versus pulse
duration (SMB)
Figure 6: Peak reverse recovery current
versus dIF /dt (typical values)
STTH1R06
Figure 7: Reverse recovery time versus dIF/dt
(typical values)
Figure 8: Reverse recovery charges versus
dIF/dt (typical values)
Figure 9: Reverse recovery softness factor
versus dIF /dt (typical values)
Figure 10: Relative variations of dynamic
parameters versus junction temperature
Figure 11: Transient peak forward voltage
versus dIF/dt (typical values)
Figure 12: Forward recovery time versus dIF/dt
(typical values)
STTH1R065/9
Figure 13: Junction capacitance versus
reverse voltage applied (typical values)
Figure 14: Thermal resistance junction to
ambient versus copper surface under each
lead (epoxy FR4, eCU=35µm) (DO-41, SMB)
Figure 15: Thermal resistance junction to
ambient versus copper surface under each
lead (epoxy FR4, eCU=35µm) (SMA)
STTH1R06
Figure 16: SMA Package Mechanical Data
Figure 17: SMA Foot Print Dimensions(in millimeters)
