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STTH1L06-STTH1L06A-STTH1L06U
TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER
STTH1L06/U/AJuly 2002- Ed:3C
TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER
The STTH1L06/U/A, whichis using ST Turbo2
600V technology,is specially suited as boost
diodein discontinuous or critical mode power
factor corrections.
The deviceis also intended for use asa free
wheeling diodein power supplies and other power
switching applications.
DESCRIPTION Ultrafast switching Low reverse recovery current Reduces switching& conduction losses Low thermal resistance
FEATURES AND BENEFITS
ABSOLUTE RATINGS (limiting values)
MAIN PRODUCT CHARACTERISTICS
STTH1L06/U/A evaluate the maximum conduction losses use the following equation:
P=0.89xIF(AV)+ 0.165IF2 (RMS)
STATIC ELECTRICAL CHARACTERISTICS
Note1: Rth(j-a)is measuredwitha copperareaS=5cm2 (see Fig12)
THERMAL PARAMETERS
DYNAMIC ELECTRICAL CHARACTERISTICS
STTH1L06/U/A
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
P(W)
Fig.1: Conduction losses versus averagecurrent.
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
IFM(A)
Fig. 2: Forward voltage drop versus forward
current.
1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
Zth(j-a)/Rth(j-a)
Fig. 3-1: Relative variationof thermal impedance
junction ambient versus pulse duration (epoxy
FR4, Leads= 10mm)
1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
Zth(j-a)/Rth(j-a)
Fig. 3-2: Relative variationof thermal impedance
junction ambient versus pulse duration (epoxy
FR4,S= 1cm²)
1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
Zth(j-a)/Rth(j-a)
Fig. 3-3: Relative variationof thermal impedance
junction ambient versus pulse duration (epoxy
FR4)
2.5 5 10 15 20 25 30 35 40 45 50
IRM(A)
Fig. 4: Peak reverse recovery current versus
dIF/dt (90% confidence).
STTH1L06/U/A
800 5 10 15 20 25 30 35 40 45 50
trr(ns)
Fig.5: Reverse recovery time versus dIF/dt
(90% confidence).
220 5 10 15 20 25 30 35 40 45 50
Qrr(nC)
Fig.6: Reverse recovery charges versus dIF/dt
(90% confidence).
2.0 5 10 15 20 25 30 35 40 45 50
S factor
Fig.7: Softness factor versus dIF/dt (typical
values).
1.25 50 75 100 125
Fig. 8: Relative variations of dynamic
parameters versus junction temperature.
20 40 60 80 100 120 140 160 180 200
VFP(V)
Fig.9: Transient peak forward voltage versus
dIF/dt (90% confidence).
200 20 40 60 80 100 120 140 160 180 200
tfr(ns)
Fig. 10: Forward recovery time versus dIF/dt
(90% confidence).
STTH1L06/U/A
100 10 100 1000
C(pF)
Fig. 11: Junction capacitance versus reverse
voltage applied (typical values).
0123456789 10
Rth(j-a)(°C/W)
Fig. 12-1: Thermal resistance junctionto ambient
versus copper surface under each lead (Epoxy
printedcircuit board FR4, copper thickness: 35μm).
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Rth(j-a)(°C/W)
Fig. 12-2: Thermal resistance junctionto ambient
versus copper surface under each lead (Epoxy
printed circuit board FR4, copper thickness: 35μm).
STTH1L06/U/A
PACKAGE MECHANICAL DATASMA
FOOTPRINT
