STTH16L06CG ,TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIERSTTH16L06C®TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIERTable 1: Main Product CharacteristicsA1IUp to 2 ..
STTH16L06CG-TR ,TURBO 2 Ultrafast High Voltage Rectifierapplications, as rectification and discontinuous mode PFC boost Kdiode.A2A12D PAKSTTH16L06CG ..
STTH16L06CG-TR ,TURBO 2 Ultrafast High Voltage Rectifierelectrical characteristicsSymboParameter Test conditions Min. Typ Max. UnitlT = 25 °C 8j(1)I Revers ..
STTH16L06CT ,TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIERapplications, as2D PAKrectification and discontinuous mode PFC boostSTTH16L06CGdiode.Table 2: Order ..
STTH16R04CFP , Ultrafast recovery diode
STTH16R04CT ,Ultrafast recovery diodesFeatures and benefitsSTTH16R04CT STTH16R04CFP■ Very low switching losses■ High frequency and/or hig ..
T6 ,1/4 in Multiturn Fully Sealed Container, Military and Professional GradeFEATURES• Military and professional grade• 0.25 Watt at 85°C• CECC 41 101-005 (A, B, C, D)• MIL-R-2 ..
T620600W ,SNUBBERLESS TRIACFEATURESA An I =6A 2 1TRMSn V =V = 600VDRM RRMGn EXCELLENT SWITCHING PERFORMANCESn INSULATING VOLTA ..
T62M0002A , Digital Sound Processor Embedded SRAM
T62M0002A , Digital Sound Processor Embedded SRAM
T62M0002A-K , Digital Sound Processor Embedded SRAM
T62M99A , Digital Sound Processor Embedded 48K Bits SRAM
STTH16L06CFP-STTH16L06CG-STTH16L06CT
TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER
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Table 1: Main Product Characteristics
STTH16L06CTURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER
Table 3: Absolute Ratings (limiting values, per diode)September 2004 REV. 1
FEATURES AND BENEFITS Ultrafast switching Low reverse recovery current Low thermal resistance Reduces switching & conduction losses
DESCRIPTIONThe STTH16L06, which is using ST Turbo 2 600V
technology, is specially suited for use in switching
power supplies, and industrial applications, as
rectification and discontinuous mode PFC boost
diode.
Table 2: Order CodesSTTH16L06C
Table 4: Thermal Resistance
Table 5: Static Electrical CharacteristicsPulse test: * tp = 5 ms, δ < 2%
** tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation: P = 1.06 x I F(AV) + 0.036 IF2 (RMS)
Table 6: Dynamic Characteristics (per diode)When the diodes 1 and 2 are used simultaneously:∆ Tj(diode 1) = P(diode 1) x R th(j-c) (Per diode) + P(diode 2) x R th(c)
STTH16L06C3/8
Figure 1: Conduction losses versus average
forward current (per diode)
Figure 2: Forward voltage drop versus forward
current (per diode)
Figure 3: Relative variation of thermal
impedance junction to case versus pulse
duration (TO-220AB & D2 PAK)
Figure 4: Relative variation of thermal
impedance junction to case versus pulse
duration (TO-220FPAB)
Figure 5: Peak reverse recovery current versus
dIF/dt (typical values, per diode)
Figure 6: Reverse recovery time versus dIF/dt
(typical values, per diode)
STTH16L06C
Figure 7: Reverse recovery charges versus
dIF/dt (typical values, per diode)
Figure 8: Reverse recovery softness factor
versus dIF/dt (typical values, per diode)
Figure 9: Relative variations of dynamic
parameters versus junction temperature
Figure 10: Transient peak forward voltage
versus dIF /dt (typical values, per diode)
Figure 11: Forward recovery time versus dIF/dt
(typical values, per diode)
Figure 12: Junction capacitance versus
reverse voltage applied (typical values, per
diode)
STTH16L06C5/8
Figure 14: TO-220AB Package Mechanical Data
Figure 13: Thermal resistance junction to
ambient versus copper surface under tab
(epoxy FR4, eCU =35µm) (D2 PAK)
STTH16L06C
Figure 15: D2 PAK Package Mechanical Data
Figure 16: D2 PAK Foot Print Dimensions(in millimeters)
