STTH15L06FP ,TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIERSTTH15L06®TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIERTable 1: Main Product CharacteristicsIUp to 20 AF ..
STTH15L06G ,TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIERFEATURES AND BENEFITS■ Ultrafast switchingK■ Low reverse current■ Low thermal resistance■ Reduces s ..
STTH15R06D ,TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIERFEATURES AND BENEFITSKn Ultrafast switchingn Low reverse recovery currentn Reduces switching losses ..
STTH15R06FP ,TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIERELECTRICAL CHARACTERISTICSSymbol Parameter Tests conditions Min. Typ. Max. UnitI Reverse leakage V ..
STTH1602CG ,HIGH EFFICIENCY ULTRAFAST DIODEELECTRICAL CHARACTERISTICS (per diode)Symbol Parameter Tests conditions Min. Typ. Max. UnitI * Reve ..
STTH1602CT ,HIGH EFFICIENCY ULTRAFAST DIODEFEATURES AND BENEFITSA2A2K■ Suited for SMPS KA1A12■ Low lossesTO-220AB I PAK■ Low forward and rever ..
T6 ,1/4 in Multiturn Fully Sealed Container, Military and Professional GradeFEATURES• Military and professional grade• 0.25 Watt at 85°C• CECC 41 101-005 (A, B, C, D)• MIL-R-2 ..
T620600W ,SNUBBERLESS TRIACFEATURESA An I =6A 2 1TRMSn V =V = 600VDRM RRMGn EXCELLENT SWITCHING PERFORMANCESn INSULATING VOLTA ..
T62M0002A , Digital Sound Processor Embedded SRAM
T62M0002A , Digital Sound Processor Embedded SRAM
T62M0002A-K , Digital Sound Processor Embedded SRAM
T62M99A , Digital Sound Processor Embedded 48K Bits SRAM
STTH15L06D-STTH15L06FP-STTH15L06G
TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER
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Table 1: Main Product Characteristics
STTH15L06TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER
Table 3: Absolute Ratings (limiting values)September 2004 REV. 1
FEATURES AND BENEFITS Ultrafast switching Low reverse current Low thermal resistance Reduces switching & conduction losses
DESCRIPTIONThe STTH15L06, which is using ST Turbo 2 600V
technology, is specially suited for use in switching
power supplies, and industrial applications, as
rectification and discontinuous mode PFC boost
diode.
Table 2: Order Codes
STTH15L06
Table 4: Thermal Resistance
Table 5: Static Electrical Characteristics (per diode)Pulse test: * tp = 5 ms, δ < 2%
** tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation: P = 0.94 x IF(AV) + 0.017 IF2 (RMS)
Table 6: Dynamic Characteristics
Figure 1: Conduction losses versus average
forward current
Figure 2: Forward voltage drop versus forward
current
STTH15L063/8
Figure 3: Relative variation of thermal
impedance junction to case versus pulse
duration (TO-220AC & D2 PAK)
Figure 4: Relative variation of thermal
impedance junction to case versus pulse
duration (TO-220FPAC)
Figure 5: Peak reverse recovery current versus
dIF/dt (typical values)
Figure 6: Reverse recovery time versus dIF/dt
(typical values)
Figure 7: Reverse recovery charges versusF /dt (typical values)
Figure 8: Reverse recovery softness factor
versus dIF /dt (typical values)
STTH15L06
Figure 9: Relative variations of dynamic
parameters versus junction temperature
Figure 10: Transient peak forward voltage
versus dIF/dt (typical values)
Figure 11: Forward recovery time versus dIF/dt
(typical values)
Figure 12: Junction capacitance versus
reverse voltage applied (typical values)
Figure 13: Thermal resistance junction to
ambient versus copper surface under tab
(epoxy FR4, eCU =35µm) (D2 PAK)
STTH15L065/8
Figure 14: D2 PAK Package Mechanical Data
Figure 15: D2 PAK Foot Print Dimensions(in millimeters)
STTH15L06
Figure 16: TO-220FPAC Package Mechanical Data
Figure 17: TO-220AC Package Mechanical Data
