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STTH152
HIGH EFFICIENCY ULTRAFAST DIODE
STTH152November 2001- Ed:1A
HIGH EFFICIENCY ULTRAFAST DIODE
The STTH152 whichis using ST's new 200V
planar technology,is specially suited for switching
mode base drive& transistor circuits.
The deviceis also intended for use asa free
wheeling diodein power supplies and other power
switching applications.
DESCRIPTION Very low conduction losses Negligible switching losses Low forward and reverse recovery times High junction temperature
FEATURES AND BENEFITS
ABSOLUTE RATINGS (limiting values)
MAIN PRODUCT CHARACTERISTICSOn infinite heatsink with 10mm lead length.
THERMAL RESISTANCES
STTH152Pulse test:*tp=5ms,δ <2%tp= 380μs,δ <2% evaluate the maximum conduction losses use the following equation:
P=0.60xIF(AV) +0.10xIF2 (RMS)
STATIC ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
STTH152
110 10 152025
Rth(°C/W)
Fig.3: Thermal resistance versus lead length.
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
IFM(A)
Fig. 5: Forward voltage drop versus forward
current.
1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
Zth(j-a)/Rth(j-a)
Fig.4: Relative variationof thermal impedance
junctionto ambient versus pulse duration (printed
circuit board epoxy FR4, LIeads= 10mm).
100 10 100 1000
C(pF)
Fig. 6: Junction capacitance versus reverse
voltage applied (typical values).
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
PF(av)(W)
Fig.1: Average forward power dissipation versus
average forward current.
1.8 25 50 75 100 125 150 175
IF(av)(A)
Fig.2: Average forward current versus ambient
temperature (δ=0.5).
STTH152
3.5 50 75 100 125 150 175
IRM;trr;Qrr[Tj]/IRM; trr;Qrr[Tj=25°C]
Fig.9: Relative variationsof dynamic parameters
versus junction temperature.
10 100 1000
trr(ns)
Fig.7: Reverse recovery time versus dIF/dt (90%
confidence).
4.0 10 100 1000
IRM(A)
Fig.8: Peak reverse recovery current versus dIF/dt
(90% confidence).
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