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STTH1506TPI
TANDEM 600V HYPERFAST RECTIFIER
STTH1506TPIMay 2002- Ed:1A
Tandem 600V Hyperfast Rectifer
The TURBOSWITCH “H” is an ultra high
performance diode composedof two 300V dicein
series. TURBOSWITCH “H” family drastically cuts
lossesin the associated MOSFET when runat
high dIF/dt.
DESCRIPTION Especially suited as boost diodein continuous
mode power factor correctors and hard
switching conditions. Designed for high di/dt operation. Hyperfast
recovery currentto compete with GaAs devices.
Allows downsizingof mosfet and heatsinks. Internal ceramic insulated devices with equal
thermal conditions for both 300V diodes. Insulation (2500V RMS) allows placement on
same heatsink as mosfet and flexible
heatsinkingon commonor separate heatsink. Matched diodes for typical PFC application
without needfor voltage balance network. C= 7pF
FEATURES AND BENEFITS
ABSOLUTE RATINGS (limiting valuesfor both diodesin series)
MAJOR PRODUCTS CHARACTERISTICSTM: TURBOSWITCHisa trademarkof STMicroelectronics
STTH1506TPIPulse test:*tp= 5ms,δ <2%tp= 380μs,δ <2% evaluate the maximum conduction losses use the following equation:
P=1.8xIF(AV)+ 0.053xIF2 (RMS)
STATIC ELECTRICAL CHARACTERISTICS (for both diodes)
THERMAL AND POWER DATA
RECOVERY CHARACTERISTICS
TURN-ON SWITCHING CHARACTERISTICS
STTH1506TPI02468 10 12 14 16 18 20
P(W)
Fig.1: Conduction losses versus averagecurrent.
IFM(A)
Fig. 2: Forward voltage drop versus forward
current.
1.E-03 1.E-02 1.E-01 1.E+00
Zth(j-c)/Rth(j-c)
Fig.3: Relative variationof thermal impedance
junctionto case versus pulse duration. 200 400 600 800 1000
IRM(A)
Fig.4: Peak reverse recovery current versus dIF/dt
(90% confidence).
100 200 400 600 800 1000
trr(ns)
Fig.5: Reverse recovery time versus dIF/dt (90%
confidence).
350 200 400 600 800 1000
Qrr(nC)
Fig.6: Reverse recovery charges versus dIF/dt
(90% confidence).
STTH1506TPI0.80 200 400 600 800 1000
S factor
Fig. 7: Softness factor versus dIF/dt (typical
values).
2.50 50 75 100 125
Fig.8: Relative variationsof dynamic parameters
versus junction temperature. 50 100 150 200 250 300 350 400 450 500
VFP(V)
Fig. 9: Transient peak forward voltage versus
dIF/dt (90% confidence).
400 100 200 300 400 500
tfr(ns)
Fig. 10: Forward recovery time versus dIF/dt (90%
confidence).
1000 10 100 1000
C(pF)
Fig. 11: Junction capacitance versus reverse
voltage applied (typical values).
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