STTH1506DPI ,TANDEM 600V HYPERFAST BOOST DIODEFEATURES AND BENEFITS1n ESPECIALLY SUITED AS BOOST DIODE INCONTINUOUS MODE POWER FACTORDOP3ICORRECT ..
STTH1506TPI ,TANDEM 600V HYPERFAST RECTIFIERFEATURES AND BENEFITS3n Especially suited as boost diode in continuousmode power factor correctors ..
STTH1512D , Ultrafast recovery - 1200 V diode
STTH1512PI ,Ultrafast recoveryapplications.t (typ) 53 nsrrThe improved performance in low leakage current, and therefore thermal ..
STTH152 ,HIGH EFFICIENCY ULTRAFAST DIODEapplications.ABSOLUTE RATINGS (limiting values)Symbol Parameter Value UnitV 200 VRRMRepetitive peak ..
STTH15L06D ,TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIERapplications, asrectification and discontinuous mode PFC boostdiode.Table 2: Order CodesPart Number ..
T6 ,1/4 in Multiturn Fully Sealed Container, Military and Professional GradeFEATURES• Military and professional grade• 0.25 Watt at 85°C• CECC 41 101-005 (A, B, C, D)• MIL-R-2 ..
T620600W ,SNUBBERLESS TRIACFEATURESA An I =6A 2 1TRMSn V =V = 600VDRM RRMGn EXCELLENT SWITCHING PERFORMANCESn INSULATING VOLTA ..
T62M0002A , Digital Sound Processor Embedded SRAM
T62M0002A , Digital Sound Processor Embedded SRAM
T62M0002A-K , Digital Sound Processor Embedded SRAM
T62M99A , Digital Sound Processor Embedded 48K Bits SRAM
STTH1506DPI
TANDEM 600V HYPERFAST BOOST DIODE
STTH1506DPIOctober 2003- Ed:2A
Tandem 600V HYPERFAST BOOST DIODE
The TURBOSWITCH “H” is an ultra high
performance diode composedof two 300V dicein
series. TURBOSWITCH “H” family drastically cuts
lossesin the associated MOSFET when runat
high dIF/dt.
DESCRIPTION ESPECIALLY SUITED AS BOOST DIODEIN
CONTINUOUS MODE POWER FACTOR
CORRECTORS AND HARD SWITCHING
CONDITIONS DESIGNED FOR HIGH DI/DT OPERATION.
HYPERFAST RECOVERY CURRENT TO
COMPETE WITH SIC DEVICES. ALLOWS
DOWNSIZING OF MOSFET AND HEATSINKS INTERNAL CERAMIC INSULATED DEVICES
WITH EQUAL THERMAL CONDITIONS FOR
BOTH 300V DIODES INSULATION (2500VRMS) ALLOWS
PLACEMENT ON SAME HEATSINK AS
MOSFET AND FLEXIBLE HEATSINKING ON
COMMON OR SEPARATE HEATSINK STATIC AND DYNAMIC EQUILIBRIUM OF
INTERNAL DIODES ARE WARRANTED BY
DESIGN PACKAGE CAPACITANCE: C=16pF
FEATURES AND BENEFITS
ABSOLUTE RATINGS (limiting values)
MAJOR PRODUCTS CHARACTERISTICS
STTH1506DPIPulse test:*tp= 100ms,δ <2%tp= 380μs,δ <2% evaluate the maximum conduction losses use the following equation:
P=1.7xIF(AV)+ 0.047xIF2 (RMS)
STATIC ELECTRICAL CHARACTERISTICS (for both diodes)
THERMAL AND POWER DATA
RECOVERY CHARACTERISTICS
TURN-ON SWITCHING CHARACTERISTICS
STTH1506DPI02468 10 12 14 16 18 20
P(W)
Fig.1: Conduction losses versus averagecurrent.
012345678
(A)FM
Fig. 2: Forward voltage drop versus forward
current.
1.E-03 1.E-02 1.E-01 1.E+00
Z/Rth(j-c) th(j-c)
Fig.3: Relative variationof thermal impedance
junctionto case versus pulse duration.
(A)RM 200 400 600 800 1000
Fig.4: Peak reverse recovery current versus dIF/dt
(typical values).
(ns)rr 200 400 600 800 1000
Fig. 5: Reverse recovery time versus dIF/dt
(typical values).
(nC)rr240 200 400 600 800 1000
Fig.6: Reverse recovery charges versus dIF/dt
(typical values).
STTH1506DPI0.80 200 400 600 800 1000
Fig. 7: Softness factor versus dIF/dt (typical
values).
2.50 50 75 100 125
Fig.8: Relative variationsof dynamic parameters
versus junction temperature. 50 100 150 200 250 300 350 400 450 500
(V)FP
Fig. 9: Transient peak forward voltage versus
dIF/dt (typical values).
350 100 200 300 400 500
(ns)fr
Fig. 10: Forward recovery time versus dIF/dt
(typical values).
1000 10 100 1000
C(pF)
Fig. 11: Junction capacitance versus reverse
voltage applied (typical values).
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