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STTH12003TV1
HIGH FREQUENCY SECONDARY RECTIFIER
STTH12003TVOctober 1999 - Ed: 4D
HIGH FREQUENCY SECONDARY RECTIFIER
Dual rectifiers suited for Switch Mode Power
Supply and high frequency DC to DC converters.
Packaged in ISOTOP, this device is intended for
use in low voltage, high frequency inverters, free
wheeling operation, welding equipment and
telecom power supplies.
DESCRIPTIONCOMBINES HIGHEST RECOVERY AND
REVERSE VOLTAGE PERFORMANCE
ULTRA-FAST, SOFT AND NOISE-FREE
RECOVERY
INSULATED PACKAGE: ISOTOP
Insulated voltage: 2500 VRMS
Capacitance: < 45 pF
LOW INDUCTANCE AND LOW CAPACITANCE
ALLOW SIMPLIFIED LAYOUT
FEATURES AND BENEFITS
ABSOLUTE RATINGS (limiting values, per diode)
MAJOR PRODUCT CHARACTERISTICSISOTOP is a registered trademark of STMicroelectronics
1/5
Pulse test : * tp = 5 ms, δ < 2 %
** tp = 380 μs, δ < 2%
To evaluate the maximum conduction losses use the following equation:
P = 0.75 x IF(AV) + 0.0042 x IF2 (RMS)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
RECOVERY CHARACTERISTICSWhen the diodes 1 and 2 are used simultaneously:
ΔTj (diode 1) = P (diode 1) x Rth(j-c) (per diode) + P (diode 2) x Rth(C)
THERMAL RESISTANCES
STTH12003TV2/5
10203040506070800
P1(W)
Fig. 1: Conduction losses versus average current(per diode).
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.61
IFM(A)
Fig. 2: Forward voltage drop versus forward
current (per diode).
1E-3 1E-2 1E-1 1E+0 1E+10.0
Zth(j-c)/Rth(j-c)
Fig. 3: Relative variation of thermal impedance
junction to case versus pulse duration. 50 100 150 200 250 300 350 400 450 5000
trr(ns)
Fig. 5: Reverse recovery time versus dIF/dt (90%
confidence, per diode). 50 100 150 200 250 300 350 400 450 5000
IRM(A)
Fig. 4: Peak reverse recovery current versus
dIF/dt (90% confidence, per diode). 50 100 150 200 250 300 350 400 450 5000.0
S factor
Fig. 6: Softness factor (tb/ta) versus dIF/dt (typical
values, per diode).
STTH12003TV3/5
50 75 100 1250.0Fig. 7: Relative variation of dynamic parameters
versus junction temperature (reference: Tj = 125°C). 50 100 150 200 250 300 350 400 450 5000
VFP(V)
Fig. 8: Transient peak forward voltage versus
dIF/dt (90% confidence, per diode). 50 100 150 200 250 300 350 400 450 5000
tfr(ns)
Fig. 9: Forward recovery time versus dIF/dt (90%
confidence, per diode).
STTH12003TV4/5
:
www.ic-phoenix.com
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