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STTH1002CB-STTH1002CFP-STTH1002CR-STTH1002CT
HIGH EFFICIENCY ULTRAFAST DIODE
STTH1002CMarch 2004- Ed:4
HIGH EFFICIENCY ULTRAFAST DIODE
Dual center tap rectifier suited for Switch Mode
Power Supplies and High frequency DCto DC
converters.
Packaged in DPAK, D2 PAK, TO-220AB,
TO220-FPAB andI2 PAK, this deviceis intended
for usein low voltage, high frequency inverters,
free wheeling and polarity protection applications.
DESCRIPTION Suitedfor SMPS Low losses Low forward and reverse recovery times Insulated package: TO-220FPAB High junction temperature Low leakage current
FEATURES AND BENEFITS
ABSOLUTE RATINGS (limiting values, per diode)
MAIN PRODUCT CHARACTERISTICS
STTH1002CPulse test:*tp= 5ms,δ <2%tp= 380µs,δ <2% evaluate the maximum conduction losses use the following equation:= 0.73x IF(AV)+ 0.032IF2 (RMS)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
DYNAMIC ELECTRICAL CHARACTERISTICSWhen the diodes1 and2 are used simultaneously:Tj (diode1)= P(diode1)x Rth(j-c) (per diode)+ P(diode2)x Rth(c)
THERMAL PARAMETERS
STTH1002C (A)M0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Fig.1: Peak current versus duty cycle (per diode).
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 2.75 3.00
(A)FM
Fig. 2-1: Forward voltage drop versus forward
current (typical values, per diode).
Z/Rth(j-c) th(j-c)1.E-03 1.E-02 1.E-01 1.E+00
Fig. 3-1: Relative variationof thermal impedance
junctionto case versus pulse duration (TO-220AB,2 PAK,D2 PAK, DPAK).
100 50 100 150 200
C(pF)
Fig. 4: Junction capacitance versus reverse
voltage applied (typical values, per diode).
(A)FM0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 2.75 3.00
Fig. 2-2: Forward voltage drop versus forward
current (maximum values, per diode).
Z/Rth(j-c) th(j-c)1.E-03 1.E-02 1.E-01 1.E+00
Fig. 3-2: Relative variationof thermal impedance
junction to case versus pulse duration
(TO-220FPAB).
STTH1002C
t(ns)rr 100 1000
Fig. 6: Reverse recovery time versus dIF/dt
(typical values, per diode).
I(A)RM 100 1000
Fig.7: Peak reverse recovery current versus dIF/dt
(typical values, per diode).
1.4 50 75 100 125 150
rrI [T]/Q;I [T =125°C]RMj rr RMj
Fig. 8: Dynamic parameters versus junction
temperature.
100 2 4 6 8 10 12 14 16 18 20
(°C/W)th(j-a)
Fig. 9-2: Thermal resistance junctionto ambient
versus copper surface under tab (Epoxy printed
circuit board FR4, eCU: 35µm)for DPAK.
02468 10 12 14 16 18 20
(°C/W)th(j-a)
Fig. 9-1: Thermal resistance junctionto ambient
versus copper surface under tab (Epoxy printed
circuit board FR4, eCU: 35µm)forD2 PAK.
(nC)rr240 100 1000
Fig.5: Reverse recovery charges versus dIF/dt
(typical values, per diode).
STTH1002C
PACKAGE MECHANICAL DATADPAK
FOOTPRINT
STTH1002C
PACKAGE MECHANICAL DATA2 PAK
FOOTPRINT DIMENSIONS (in millimeters)
