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STTA806D -STTA806DI
TURBOSWITCH
SPECIFICTO“FREEWHEEL MODE” OPERATIONS:FREEWHEEL OR BOOSTER DIODE ULTRA-FAST AND SOFT RECOVERY VERY LOW OVERALL POWER LOSSES IN
BOTH THE DIODE AND THE COMPANION
TRANSISTOR HIGH FREQUENCY OPERATIONS INSULATED PACKAGE: TO-220AC
Electrical insulation: 2500VRMS
Capacitance<7pF
FEATURES AND BENEFITSThe TURBOSWITCHisa very high performance
seriesof ultra-fast high voltage power diodes from
600Vto 1200V.
TURBOSWITCH family, drastically cuts lossesin
both the diode and the associated switching IGBT MOSFETin all “freewheel mode” operations
andis particularly suitable and efficientin motor
control freewheel applications and in booster
diode applications in power factor control
circuitries.
Packaged either in TO-220AC, insulated
TO-220ACorinD2 PAK, these 600V devices are
particularly intended for use on 240V domestic
mains.
DESCRIPTION
MAIN PRODUCTS CHARACTERISTICSTM:TURBOSWITCH isatrademarkof STMicroelectronics
ABSOLUTE RATINGS (limiting values)
STTA806D/DI/GTURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE
STTA806D/DI/GTest pulse: *tp=380μs,δ <2% tp=5ms,δ <2%
STATIC ELECTRICAL CHARACTERISTICS
THERMAL AND POWER DATA
DYNAMIC ELECTRICAL CHARACTERISTICS
TURN-OFF SWITCHING
TURN-ON SWITCHING evaluate the maximum conduction losses use the following equation:
P=Vto xIF(AV) +rdxIF2 (RMS)
STTA806D/DI/G
P1(W)
012 34567 80
Fig.1: Conduction losses versus average current.
0.1 1 10 1000.00
VFM(V)
Fig. 2: Forward voltage drop versus forward
current.
Fig. 3: Relative variation of thermal transient
impedance junctionto caseversus pulse duration.
100 200 300 400 500 600 700 800 90010000.0
IRM(A)
Fig. 4: Peak reverse recovery current versus
dIF/dt.
100 200 300 400 500 600 700 800 900 10000
200 trr(ns)
Fig.5: Reverse recovery time versus dIF/dt.
100 200 300 400 500 600 700 800 900 10000.0
1.6 Sfactor
Fig.6: Softness factor (tb/ta) versus dIF/dt.
STTA806D/DI/G 25 50 75 100 125 1500.5
Fig.7: Relative variationof dynamic parameters
versus junction temperature(reference Tj=125°C).
20 40 60 80 100 120 140 1600 VFP(V)
Fig.8: Transient peak forward voltage versus
dIF/dt.
20 40 60 80 100 120 140 160
500 tfr(ns)
Fig.9: Forward recovery time versus dIF/dt.
STTA806D/DI/G
Fig.A: “FREEWHEEL” MODE.
The TURBOSWITCHis especially designedto
provide the lowest overall power lossesin any
“FREEWHEEL Mode” application (Fig.A)
considering both the diode and the companion
transistor, thus optimizing the overall performance the end application.
The wayof calculating the power lossesis given
below:
APPLICATION DATA
STTA806D/DI/G
Turn-on losses:
(in the transistor, dueto the diode)= VI S F
xdI dt RM + × ×2 32 × × ×+×VI I S F
xdI dt
RRM L2
Turn-off losses(in the diode):= VI S F
xdI dt RM ×2 and P5 are suitable for power MOSFET and
IGBT
Fig.B: STATIC CHARACTERISTICS
Fig.C: TURN-OFF CHARACTERISTICS
Fig.D: TURN-ON CHARACTERISTICS
Conduction losses:
P1=Vt0 .IF(AV) +Rd .IF2 (RMS)
Reverse losses:
P2=VR .IR .(1-δ)
Turn-on losses:= 0.4 (VFP -VF).IFmax .tfr.F
APPLICATION DATA (Cont’d)
