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Partno	Mfg	Dc	Qty	Available	Descript
STTA506	ST	N/a	188	avai	TURBOSWITCH
STTA506B-TR \|STTA506BTR	N/A	N/a	1	avai	TURBOSWITCH

STTA506 ,TURBOSWITCHapplications in power factor control circuitries.TURBOSWITCH family, drastically cuts losses in Pac ..
STTA506B-TR ,TURBOSWITCHFEATURES AND BENEFITSSTTA506D STTA506FSPECIFIC TO "FREEWHEEL MODE" OPERATIONS:FREEWHEEL OR BOOSTER ..
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STTA506-STTA506B-TR
TURBOSWITCH
November 1999 - Ed : 3D
SPECIFIC TO "FREEWHEEL MODE" OPERATIONS:
FREEWHEEL OR BOOSTER DIODE
ULTRA-FAST AND SOFT RECOVERY
VERY LOW OVERALL POWER LOSSES IN
BOTH THE DIODE AND THE COMPANION
TRANSISTOR
HIGH FREQUENCY OPERATIONS
INSULATED PACKAGE : ISOWATT220AC
Electrical insulation : 2000VDC
Capacitance < 12 pF
FEATURES AND BENEFITS
The TURBOSWITCH is a very high performance
series of ultra-fast high voltage power diodes from
600V to 1200V.
TURBOSWITCH family, drastically cuts losses in
both the diode and the associated switching IGBT
or MOSFET in all "freewheel mode" operations
and is particularly suitable and efficient in motor
control freewheel applications and in booster diode
applications in power factor control circuitries.
Packaged either in TO-220AC, ISOWATT220AC
or in DPAK, these 600V devices are particularly
intended for use on 240V domestic mains.
DESCRIPTION
MAIN PRODUCTS CHARACTERISTICS
TM : TURBOSWITCH is a trademark of STMicroelectronics
ABSOLUTE RATINGS (limiting values)
STTA506D/F/B
TURBOSWITCH  ULTRA-FAST HIGH VOLTAGE DIODE
1/10
Test pulse : * tp = 380 μs, δ < 2%
** tp = 5 ms, δ < 2%
STATIC ELECTRICAL CHARACTERISTICS
THERMAL AND POWER DATA
DYNAMIC ELECTRICAL CHARACTERISTICS
TURN-OFF SWITCHING
TURN-ON SWITCHING
To evaluate the maximum conduction losses use the following equation :
P = Vto x IF(AV) + rd x IF2 (RMS)
STTA506D/F/B
2/10
50 100 150 200 250 300 350 400 450 5000.00P3(W)
Fig. 1: Switching OFF losses versus dI/dt. 25 50 75 100 125 1500.5
Fig. 6: Relative variation of dynamic parameters
versus junction temperature (reference Tj = 125°C). 100 200 300 400 500 600 700 800 90010000.0
2.0 Sfactor
Fig. 5: Softness factor (tb/ta) versus dIF/dt. 100 200 300 400 500 600 700 800 90010000
180 trr(ns)
Fig. 4: Reverse recovery time versus dIF/dt. 100 200 300 400 500 600 700 800 90010000.0
IRM(A)
Fig. 3: Peak reverse recovery current versus
dIF/dt.
0.1 1 10 1000.00
VFM(V)
Fig. 2: Forward voltage drop versus forward
current.
STTA506D/F/B
3/10
10203040506070 8090 1000VFP(V)
Fig. 7: Transient peak forward voltage versus
dIF/ft.
tfr(ns) 102030 40506070 80 90 1000
Fig. 8: Forward recovery time versus dIF/dt.
Fig. 10: Relative cariation of thermal transient im-
pedance junction to case versus pulse duration
(ISOWATT220AC).
Fig. 9: Relative cariation of thermal transient im-
pedance junction to case versus pulse duration
(TO-220AC and DPAK).
STTA506D/F/B
4/10
The TURBOSWITCH is especially designed to
provide the lowest overall power losses in any
"FREEWHEEL Mode" application (Fig.A)
considering both the diode and the companion
transistor, thus optimizing the overall performance
in the end application.
The way of calculating the power losses is given
below:
APPLICATION DATA
Fig. A : "FREEWHEEL" MODE
STTA506D/F/B
5/10
Fig. B : STATIC CHARACTERISTICS
Conduction losses :
P1 = Vt0 . IF(AV) + Rd . IF2 (RMS)
Reverse losses :
P2 = VR . IR . (1 - δ)
APPLICATION DATA (Cont’d)
Turn-on losses :
(in the transistor, due to the diode)
P5 = VR × IRM 2 × ( 3 + 2 × S ) × F
6 x dIF ⁄ dt VR × IRM × IL × ( S + 2 ) × F
2 x dIF ⁄ dt
Turn-off losses (in the diode) :
P3 = VR × IRM 2 × S × F
6 x dIF ⁄ dt
P3 and P5 are suitable for power MOSFET and
IGBT
Fig. C : TURN-OFF CHARACTERISTICS
STTA506D/F/B
6/10

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