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STTA306B
TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE
STTA306BNovember 1999 - Ed: 3C
TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE
MAIN PRODUCT CHARACTERISTICSSPECIFIC TO FREEWHEEL MODE OPERATIONS:
FREEWHEEL OR BOOSTER DIODE.
ULTRA-FAST, AND SOFT RECOVERY.
VERY LOW OVERALL POWER LOSSES IN
BOTH THE DIODE AND THE COMPANION
TRANSISTOR.
HIGH FREQUENCY OPERATIONS.
FEATURES AND BENEFITSThe TURBOSWITCH is a very high performance
series of ultra-fast high voltage power diodes.
TURBOSWITCH family drastically cuts losses in
both the diode and the associated switching IGBT
or MOSFET in all freewheel mode operations and
is particulary suitable and efficient in motor control
freewheel applications and in booster diode appli-
cations in Power Factor Control circuitries.
Packaged in DPAK, these 600V devices are par-
ticularly intended for use on 240V domestic mains.
DESCRIPTIONTM : TURBOSWITCH is a trademark from STMicroelectronics
ABSOLUTE RATINGS (limiting values)1/8
THERMAL AND POWER DATATest pulse : * tp = 380 μs, δ < 2%
** tp = 5 ms, δ < 2%
STATIC ELECTRICAL CHARACTERISTICS To evaluate the maximum conduction losses use the following equation :
P = Vto x IF(AV) + Rd x IF2 (RMS)
DYNAMIC ELECTRICAL CHARACTERISTICS
TURN-OFF SWITCHING
TURN-ON SWITCHING
STTA306B2/8
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.51E-2
1E-1
1E+0
1E+1
5E+1
IFM(A)
Fig. 2: Forward voltage drop versus forward
current (maximum values).
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+21E-3
1E-2
1E-1
1E+0
Zth(j-a) (°C/W)
Fig. 3: Relative variation of thermal transient
impedance junction to ambient versus pulse
duration (recommended pad layout). 20 40 60 80 100 120 140 160 180 2000
trr(ns)
Fig. 5: Reverse recovery time versus dIF/dt (90%
confidence). 20 40 60 80 100 120 140 160 180 2000
IRM(A)
Fig. 4: Peak reverse recovery current versus dIF/dt(90% confidence). 20 40 60 80 100 120 140 160 180 2000.2
1.6
S factor
Fig. 6: Softness factor (tb/ta) versus dIF/dt (typicalvalues).
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.80.0
P1(W)
Fig. 1: Conduction losses versus average current.
STTA306B
3/8
20 40 60 80 100 120 140 160 180 2000300
tfr(ns)
Fig. 9: Forward recovery time versus dIF/dt (90%confidence). 10 100 2001
C(pF)
Fig. 10: Junction capacitance versus reverse
voltage applied (typical values). 20 40 60 80 100 120 140 160 180 2000
VFP(V)
Fig. 8: Transient peak forward voltage versus
dIF/dt (90% confidence). 50 75 100 1250.7
Fig. 7: Relative variation of dynamic parameters
versus junction temperature (reference Tj=125°C).
STTA306B4/8
The TURBOSWITCHTM is especially designed to
provide the lowest overall power losses in any
Freewheel Mode application (see fig. A) consider-
ing both the diode and the companion transistor,
thus optimizing the overall performance in the end
application.
The way of calculating the power losses is given
below :
APPLICATION DATA
Fig. A : "FREEWHEEL" MODE
STTA306B5/8
Fig. B : STATIC CHARACTERISTICS
Conduction losses :P1 = Vto x IF(AV) + Rd x IF2 (RMS)
Reverse losses :P2 = VR x IR x (1 - δ)
APPLICATION DATA (Cont’d)
Turn-on losses :(in the transistor, due to the diode)
P5 = VR × IRM 2 × (3 + 2 × S) × F
6 x dIF ⁄ dt VR × IRM × IL × (S + 2) × F
2 × dIF ⁄ dt
Turn-off losses (in the diode) :P3 = VR × IRM 2 × S × F
6 x dIF ⁄ dt
P3 and P5 are suitable for power MOSFET and
IGBT
Fig. C : TURN-OFF CHARACTERISTICS
STTA306B6/8
