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STTA3006P ,TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODEFEATURES AND BENEFITSSTTA6006TV1 STTA6006TV2SPECIFIC TO "FREEWHEEL MODE" OPERATIONS:FREEWHEEL OR BO ..
STTA3006PI ,TURBOSWITCHSTTA3006P/PISTTA6006TV1/2®TURBOSWITCH
STTA2512P-STTA5012TV1
TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE
ISOTOP and TURBOSWITCH are trademarks of STMicroelectronics.
November 1999 - Ed: 4B
ULTRA-FAST, SOFT RECOVERY.
VERY LOW OVERALL POWER LOSSES IN
BOTH THE DIODE AND THE COMPANION
TRANSISTOR.
HIGH FREQUENCY AND/OR HIGH PULSED
CURRENT OPERATION.
HIGH REVERSE VOLTAGE CAPABILITY.
LOW INDUCTANCE PACKAGE < 5 nH.
INSULATED PACKAGE : ISOTOPTM
Electrical insulation : 2500VRMS
Capacitance : < 45pF.
FEATURES AND BENEFITSTURBOSWITCH 1200V drastically cuts losses in
all high voltage operations which require extremely
fast, soft and noise-free power diodes. Due to their
optimized switching performances they also highly
decrease power losses in any associated
switching IGBT or MOSFET in all freewheel mode
operations.
They are particularly suitable in Motor Control
circuitries, or in the primary of SMPS as snubber,
clamping or demagnetizing diodes. They are also
suitable for secondary of SMPS as high voltage
rectifier diodes.
DESCRIPTION
MAIN PRODUCT CHARACTERISTICS
ABSOLUTE RATINGS (limiting values, per diode)
STTA2512P
STTA5012TV1/2TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE
1/9
DYNAMIC ELECTRICAL CHARACTERISTICS (per diode)
TURN-OFF SWITCHING
TURN-ON SWITCHINGTest pulses : * tp = 380 μs, δ < 2%
** tp = 5 ms , δ < 2%
STATIC ELECTRICAL CHARACTERISTICS (per diode)To evaluate the maximum conduction losses use the following equation :
P = Vto x IF(AV) + Rd x IF2 (RMS)
THERMAL AND POWER DATA (per diode)
STTA2512P / STTA5012TV1/22/9
5 10 15 20 25 30
P1(W)
Fig. 1: Conduction losses versus average current(per diode).
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.01
IFM(A)
Fig. 2: Forward voltage drop versus forward
current (maximum values, per diode).
1E-3 1E-2 1E-1 1E+0 5E+00.0
Zth(j-c)/Rth(j-c)
Fig. 3-1: Relative variation of thermal impedance
junction to case versus pulse duration (per diode)
(ISOTOP).
1E-4 1E-3 1E-2 1E-1 1E+00.0
Zth(j-c)/Rth(j-c)
Fig. 3-2: Relative variation of thermal impedance
junction to case versus pulse duration (SOD93). 100 200 300 400 5000
trr(ns)
Fig. 5: Reverse recovery time versus dIF/dt (90%
confidence, per diode). 100 200 300 400 5000
IRM(A)
Fig. 4: Peak reverse recovery current versus dIF/dt(90% confidence, per diode).
STTA2512P / STTA5012TV1/23/9
100 200 300 400 5000.801.60
factor
Fig. 6: Softness factor (tb/ta) versus dIF/dt (typicalvalues, per diode). 50 75 100 1250.7
Fig. 7: Relative variation of dynamic parameters
versus junction temperature (reference Tj=125°C). 100 200 300 400 5000
VFP(V)
Fig. 8: Transient peak forward voltage versus
dIF/dt (90% confidence, per diode). 100 200 300 400 500
tfr(ns)
Fig. 9: Forward recovery time versus dIF/dt (90%
confidence, per diode).
STTA2512P / STTA5012TV1/24/9
Fig. A : "FREEWHEEL" MODE.The 1200V TURBOSWITCH series has been
designed to provide the lowest overall power
losses in all high frequency or high pulsed current
operations. In such applications (Fig A to D),the
way of calculating the power losses is given below :
APPLICATION DATA
STTA2512P / STTA5012TV1/25/9
Fig. E: STATIC CHARACTERISTICS
Conduction losses :P1 = Vto . IF(AV) + Rd . IF2 (RMS)
Max values at 125°C,suitable for Ipeak < 3.IF(av)
Reverse losses :P2 = VR . IR . (1 - δ)
Fig. B : SNUBBER DIODE. Fig. C : DEMAGNETIZING DIODE.
Fig. D : RECTIFIER DIODE.
STATIC & DYNAMIC CHARACTERISTICS . POWER LOSSES .
STTA2512P / STTA5012TV1/26/9
