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STTA212S
TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE
TURBOSWITCH is a trademark of STMicroelectronics
November 1999 - Ed: 4A
SPECIFIC TO THE FOLLOWING OPERATIONS:
SNUBBING OR CLAMPING, DEMAGHETIZATION
AND RECTIFICATION
ULTRA-FAST AND SOFT RECOVERY
VERY LOW OVERALL POWER LOSSES IN
BOTH THE DIODE AND THE COMPANION
TRANSISTOR
HIGH FREQUENCY OPERATION
HIGH REVERSE VOLTAGE CAPABILITY
FEATURES AND BENEFITSTURBOSWITCH 1200V drastically cuts losses in
all high voltage operations which require extremely
fast, soft and noise-free power diodes.
Due to their optimized switching performances
they aloso highly decrease power losses in any
associated switching IGBT or MOSFET in all
"freewheel mode" operations and is particulary
suitable and efficient in motor control circuitries, or
in primary of SMPS as snubber, clamping or
demagnetizing diodes secondary of SMPS as high
voltage rectifier diodes. They are also suitable for
the secondary of SMPS as high voltage rectifier
diodes.
DESCRIPTION
MAIN PRODUCT CHARACTERISTICS
ABSOLUTE RATINGS (limiting values)
STTA212STURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE
1/8
Test pulses : * tp = 380 μs, δ < 2%
** tp = 5 ms , δ < 2%
STATIC ELECTRICAL CHARACTERISTICS
THERMAL AND POWER DATA
DYNAMIC ELECTRICAL CHARACTERISTICS
TURN-OFF SWITCHING
TURN-ON SWITCHING To evaluate the maximum conduction losses use the following equation :
P = Vto x IF(AV) + rd x IF2 (RMS)
STTA212S2/8
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.00.0
P1(W)
Fig. 1: Conduction losses versus average current. 123 451E-2
1E-1
1E+0
1E+1
5E+1
IFM(A)
Fig. 2: Forward voltage drop versus forward
current (maximum values).
1E-1 1E+0 1E+1 1E+2
Zth(j-a)(°C/W)1E-2 5E+21
Fig. 3: Variation of thermal impedance junction to
ambient versus pulse duration (epoxy printed cir-
cuit board FR4, e(Cu)=35μm, S(Cu)=1cm2). 20 40 60 80 100 120 140 160 180 2000.60
1.20
factor
Fig. 5: Softness factor (tb/ta) versus dIF/dt (typicalvalues). 20 40 60 80 100 120 140 160 180 2000
trr(ns)
Fig. 6: Reverse recovery time versus dIF/dt (90%
confidence). 20 40 60 80 100 120 140 160 180 2000
IRM(A)
Fig. 4: Peak reverse recovery current versus dIF/dt(90% confidence).
STTA212S3/8
204060 80 1000
VFP(V)
Fig. 8: Transient peak forward voltage versus
dIF/dt. 2040 6080 100200
tfr(ns)
Fig. 9: Forward recovery time versus dIF/dt. 50 75 100 1250.7
Fig. 7: Relative variation of dynamic parameters
versus junction temperature (reference Tj=125°C).
STTA212S4/8
The 1200V TURBOSWITCH has been designed
to provide the lowest overall power losses in any all
high frequency or high pulsed current operations.
In such applications (fig. A to D), the way of
calculating the power losses is given below :
APPLICATION DATA
Fig. A : "FREEWHEEL" MODE
STTA212S5/8
Fig. B : SNUBBER DIODE. Fig. C : DEMAGNETIZING DIODE.
Fig. D : RECTIFIER DIODE.
APPLICATION DATA (Cont’d)
Fig. E : STATIC CHARACTERISTICS
Conduction losses :P1 = Vt0 x IF(AV) + Rd x IF2 (RMS)
Reverse losses :P2 = VR x IR x (1 - δ)
STTA212S6/8
