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STTA206S
TURBOSWITCH
TM : TURBOSWITCH is a trademark of STMicroelectronics
November 1999 - Ed: 2D
SPECIFIC TO "FREEWHEEL MODE" OPERA-
TIONS : FREEWHEEL OR BOOSTER DIODE
ULTRA-FAST AND SOFT RECOVERY
VERY LOW OVERALL POWER LOSSES IN
BOTH THE DIODE AND THE COMPANION
TRANSISTOR
HIGH FREQUENCY OPERATIONS
SURFACE MOUNT DEVICE
FEATURES AND BENEFITSThe TURBOSWITCH is a very high performance
series of ultra-fast high voltage power diodes from
600V to 1200V.
TURBOSWITCH "A" family drastically cuts losses
in both the diode and the associated switching
IGBT or MOSFET in all "Freewheel Mode"
operations and is particulary suitable and efficient
in Motor Control Freewheel applications and in
Booster diode applications in Power Factor Control
circuitries.
Packaged in SMC surface mount envelope, these
600V devices are particularly intended for use on
240V domestic mains.
DESCRIPTION
MAIN PRODUCTS CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS
STTA206STURBOSWITCH "A". ULTRA-FAST HIGH VOLTAGE DIODE
1/8
STATIC ELECTRICAL CHARACTERISTICS (see Fig. 2)
THERMAL AND POWER DATA
DYNAMIC ELECTRICAL CHARACTERISTICS
TURN-OFF SWITCHING (see Fig. 3)
TURN-ON SWITCHING (see Fig.8)Test pulses widths : * tp = 380 μs, duty cycle < 2%
** tp = 5 ms , duty cycle < 2%
STTA206S2/8
The TURBOSWITCHTM "A" is especially
designed to provide the lowest overall power
losses in any "Freewheel Mode" application (see
fig. 1) considering both the diode and the
companion transistor, thus optimizing the overall
performance in the end application.
The way of calculating the power losses is given
below :
APPLICATION DATA
Fig. 1 : "FREEWHEEL" MODE
STTA206S3/8
Fig. 2 : STATIC CHARACTERISTICS
Conduction losses :P1 = Vt0 x IF(AV) + Rd x IF2 (RMS)
with
Vt0 = 1.15 V
Rd = 0.175 Ohm
(Max values at 125°C)
Reverse losses :P2 = VR x IR x (1 - δ)
APPLICATION DATA (Cont’d)
Turn-on losses :(in the transistor, due to the diode)
P5 = VR × IRM 2 × (3 + 2 × S) × F
6 x dIF ⁄ dt VR × IRM × IL × (S + 2) × F
2 × dIF ⁄ dt
Turn-off losses (in the diode) :P3 = VR × IRM 2 × S × F
6 x dIF ⁄ dt
P3 and P5 are suitable for power MOSFET and
IGBT
Fig. 3 : TURN-OFF CHARACTERISTICS
STTA206S4/8
APPLICATION DATA (Cont’d)
Fig. 4 : TURN-ON CHARACTERISTICS
Turn-on losses :P4 = 0.4 (VFP - VF) x IFmax x tfr x F
Ratings and characteristics curves are ON
GOING.
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.00.0
3.0
P1(W)
Fig. 5: Conduction losses versus average current. 20 40 60 80 100 120 140 160 180 2000.00
0.35
P3(W)
Fig. 6: Switching OFF losses versus dIF/dt. 20 40 60 80 100 120 140 160 180 2000
P4(W)
Fig. 7: Switching ON losses versus dIF/dt. 20 40 60 80 100 120 140 160 180 2000.0
P5(W)
Fig. 8: Switching losses in transistor due to the diode.
STTA206S
5/8
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.51E-2
1E-1
1E+0
1E+1
5E+1
IFM(A)
Fig. 9: Forward voltage drop versus forward
current (maximum values).
Zth(j-a) (°C/W)
Fig. 10: Relative variation of thermal impedance
junction to ambient versus pulse duration
(recommended pad layout). 20 40 60 80 100 120 140 160 180 2000
300
trr(ns)
Fig. 12: Reverse recovery time versus dIF/dt (90%confidence). 50 100 150 2000
IRM(A)
Fig. 11: Peak reverse recovery current versus
dIF/dt (90% confidence). 50 75 100 1250.7
Fig. 14: Relative variation of dynamic parameters
versus junction temperature (reference Tj=125°C). 20 40 60 80 100 120 140 160 180 2000.6
1.8
S factor
Fig. 13: Softness factor (tb/ta) versus dIF/dt
(typical values).
STTA206S6/8
