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STTA112U
TURBOSWITCH
TURBOSWITCH is a trademark of STMicroelectronics
November 1999 - Ed: 5A
SPECIFIC TO THE FOLLOWING OPERATIONS:
SNUBBING OR CLAMPING, DEMAGNETIZATION
AND RECTIFICATION
ULTRA-FAST AND SOFT RECOVERY
VERY LOW OVERALL POWER LOSSES IN
BOTH THE DIODE AND THE COMPANION
TRANSISTOR
HIGH FREQUENCY OPERATION
HIGH REVERSE VOLTAGE CAPABILITY
FEATURES AND BENEFITSTURBOSWITCH 1200V drastically cuts losses in
all high voltage operations which require extremely
fast, soft and noise-free power diodes.
Due to their optimized switching performances
they also highly decrease power losses in any
associated switching IGBT or MOSFET in all
freewheel mode operations.
They are particularly suitable in motor control
circuitries, or in primary of SMPS as snubber,
clamping or demagnetizing diodes. They are also
suitable for the secondary of SMPS as high voltage
rectifier diodes.
DESCRIPTION
MAIN PRODUCT CHARACTERISTICS
ABSOLUTE RATINGS (limiting values)
STTA112UTURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE
1/8
Test pulses : * tp = 380 μs, δ < 2%
** tp = 5 ms , δ < 2%
STATIC ELECTRICAL CHARACTERISTICS
THERMAL AND POWER DATA
DYNAMIC ELECTRICAL CHARACTERISTICS
TURN-OFF SWITCHING
TURN-ON SWITCHINGTo evaluate the maximum conduction losses use the following equation :
P = Vto x IF(AV) + Rd x IF2 (RMS)
STTA112U2/8
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
P1(W)
Fig. 1: Conduction losses versus average current.
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.00.1
IFM(A)
Fig. 2: Forward voltage drop versus forward cur-
rent (Maximum values).
Fig. 3: Relative variation of thermal transient im-pedance junction to lead versus pulse duration. 20 40 60 80 100 120 140 160 180 2000.0
IRM(A)
Fig. 4: Peak reverse recovery current versus dIF/dt
(90% confidence). 20 40 60 80 100 120 140 160 180 2000
trr(ns)
Fig. 5: Reverse recovery time versus dIF/dt (90%
confidence). 20 40 60 80 100 120 140 160 180 2000.40
S factor
Fig. 6: Softness factor (tb/ta) versus dIF/dt (Typical
values).
STTA112U3/8
50 75 100 1250.7Fig. 7: Relative variation of dynamic parameters
versus junction temperature (Reference Tj=125°C). 2040 6080 1000
VFP(V)
Fig. 8: Transient peak forward voltage versus
dIF/dt (90% confidence). 20406080 100200
tfr(ns)
Fig. 9: Forward recovery time versus dIF/dt (90%
confidence).
STTA112U4/8
The 1200V TURBOSWITCHTM series has been
designed to provide the lowest overall power
losses in all frequency or high pulsed current
operations.
In such application (fig. A to D), the way of
calculating the power losses is given below :
APPLICATION DATA
Fig. A : "FREEWHEEL MODE".
STTA112U5/8
Fig. E : STATIC CHARACTERISTICS.
Conduction losses :P1 = Vto x IF(AV) + Rd x IF2 (RMS)
Reverse losses :P2 = VR x IR x (1 - δ)
Fig. B : SNUBBER DIODE. Fig. C : DEMAGNETIZING DIODE.
Fig. D : RECTIFIER DIODE.
APPLICATION DATA (Cont’d)
STTA112U6/8