STT2PF60L ,P-CHANNEL 60VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STT2PF60L ,P-CHANNEL 60VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 60 VDS GSV Drain- ..
STT3PF20V ,P-CHANNEL 20VSTT3PF20VP-CHANNEL 20V - 0.14 W - 2.2A SOT23-6L2.7-DRIVE STripFET™ II POWER MOSFETTYPE V R IDSS DS( ..
STT3PF30L ,P-CHANNEL 30VSTT3PF30LP-CHANNEL 30V - 0.14 Ω - 3A SOT23-6LSTripFET™ II POWER MOSFETTYPE V R IDSS DS(on) DSTT3PF3 ..
STT4PF20V ,P-CHANNEL 20VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STT5NF20V ,N-CHANNEL 20V 0.030 OHM 5A SOT23-6L 2.7-DRIVE STRIPFET II POWER MOSFETELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
T5743P3 ,UHF ASK/FSK ReceiverBlock Diagram UHF ASK/FSKUHF ASK/FSKRemote control transmitter Remote control receiverT5743U2741BDe ..
T5743P3 ,UHF ASK/FSK ReceiverFeatures• Two Different IF Receiving Bandwidth Versions Are Available (B = 300 kHz or 600 kHz)IF• 5 ..
T5743P3-TGQ ,UHF ASK/FSK Receiverapplications are in the areas of telemetering, security technology and keyless-entrysystems. It can ..
T5744 ,UHF ASK Receiver ICFeatures• Minimal External Circuitry Requirements, no RF Components on the PC Board Except Matching ..
T5750 ,UHF ASK/FSK TransmitterFeatures• Integrated PLL Loop Filter ESD Protection also at ANT1/ANT2 (4 kV HBM/200 V MM; Except P ..
T5750 ,UHF ASK/FSK TransmitterBlock Diagram UHF ASK/FSK UHF ASK/FSKRemote control transmitter Remote control receiver1 Li cellT5 ..
STT2PF60L
P-CHANNEL 60V
1/6
May 2002
STT2PF60LP-CHANNEL 60V - 0.20 Ω - 2A SOT23-6L
STripFET™ II POWER MOSFET TYPICAL RDS(on) = 0.20 Ω STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE
DESCRIPTIONThis Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS DC MOTOR DRIVE DC-DC CONVERTERS BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT POWER MANAGEMENT IN
PORTABLE/DESKTOP PCs CELLULAR
MARKING STP6
ABSOLUTE MAXIMUM RATINGS(•) Pulse width limited by safe operating area. Note: For the P-CHANNEL MOSFET actual polarity of voltages and
current has to be reversed
INTERNAL SCHEMATIC DIAGRAM
STT2PF60L
THERMAL DATA(*) Mounted on a 1 in2 pad of 2 oz Cu in FR-4 board
(**) Mounted on a minimum pad of 2 oz Cu in FR-4 board
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)OFF
ON (*)
DYNAMIC
3/6
STT2PF60LSWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ELECTRICAL CHARACTERISTICS (continued)
STT2PF60L
Fig. 2: Gate Charge test Circuit
Fig. 3: Test Circuit For Diode Recovery Behaviour
Fig. 1: Switching Times Test Circuits For Resistive Load
STT2PF60L. consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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2002 STMicroelectronics - All Rights Reserved
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