STSJ3NM50 ,N-CHANNEL 500VELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ONSymbol Parameter Test Conditions Min. Typ. Max. U ..
STSJ60NH3LL , N-channel 30V - 0.004ohm - 15A - PowerSO-8 STripFET Power MOSFET for DC-DC conversion
STSR2CD ,FORWARD SYNCHRONOUS RECTIFIERS SMART DRIVERapplications with logic gateCCthreshold mosfets. UVLO feature guarantees proper start-up while it a ..
STSR2CD-TR ,FORWARD SYNCHRONOUS RECTIFIERS SMART DRIVERSTSR2FORWARD SYNCHRONOUSRECTIFIERS SMART DRIVER■ SUPPLY VOLTAGE RANGE: 4.5V TO 5.5V■ TYPICAL PEAK O ..
STSR2P ,FORWARD SYNCHRONOUS RECTIFIERS SMART DRIVERAbsolute Maximum Ratings are those values beyond which damage to the device may occur. Functional o ..
STSR2PCD ,FORWARD SYNCHRONOUS RECTIFIERS SMART DRIVERABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV DC Input Voltage-0.3 to 6 VCCV Max Gate Drive ..
T5743P3 ,UHF ASK/FSK ReceiverBlock Diagram UHF ASK/FSKUHF ASK/FSKRemote control transmitter Remote control receiverT5743U2741BDe ..
T5743P3 ,UHF ASK/FSK ReceiverFeatures• Two Different IF Receiving Bandwidth Versions Are Available (B = 300 kHz or 600 kHz)IF• 5 ..
T5743P3-TGQ ,UHF ASK/FSK Receiverapplications are in the areas of telemetering, security technology and keyless-entrysystems. It can ..
T5744 ,UHF ASK Receiver ICFeatures• Minimal External Circuitry Requirements, no RF Components on the PC Board Except Matching ..
T5750 ,UHF ASK/FSK TransmitterFeatures• Integrated PLL Loop Filter ESD Protection also at ANT1/ANT2 (4 kV HBM/200 V MM; Except P ..
T5750 ,UHF ASK/FSK TransmitterBlock Diagram UHF ASK/FSK UHF ASK/FSKRemote control transmitter Remote control receiver1 Li cellT5 ..
STSJ3NM50
N-CHANNEL 500V
1/8August 2002
STSJ3NM50N-CHANNEL 500V - 2.5Ω - 3A PowerSO-8
Zener-Protected MDmesh™ POWER MOSFET TYPICAL RDS(on) = 2.5 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE
CHARGE LOW GATE INPUT RESISTANCE TIGHT PROCESS CONTROL AND HIGH
MANUFACTORING YIELDS
DESCRIPTIONThe MDmesh™ is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company’s PowerMESH™ horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company’s proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar completition’s products.
APPLICATIONSThe MDmesh™ family is very suitable for increase
the power density of high voltage converters allow-
ing system miniaturization and higher efficiencies.
ABSOLUTE MAXIMUM RATINGS
STSJ3NM50
THERMAL DATA
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF (1)
DYNAMIC
3/8
STSJ3NM50
ELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. When mounted on 1inch² FR4 Board, 2oz of Cu, t ≤ 10 sec. Pulse width limited by safe operating area ISD<3.3A, di/dt<400A/μs, VDD
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
STSJ3NM50
Static Drain-source On ResistanceTransconductance
Transfer CharacteristicsOutput Characteristics
Capacitance VariationsGate Charge vs Gate-source Voltage
5/8
STSJ3NM50
Normalized BVdss vs TemperatureSource-drain Diode Forward Characteristics
Normalized Gate Threshold Voltage vs Temp. Normalized On Resistance vs Temperature
STSJ3NM50
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test Circuit
Fig. 3: Switching Times Test Circuit For
Resistive Load
