STS8C5H30L ,N-CHANNEL 30V -0.018 OhmFeatures Figure 1: PackageTYPE V R IDSS DS(on) DSTS8C5H30L (N-Channel) 30 V < 0.022 Ω 8 ASTS8C5H30L ..
STS8DN3LLH5 ,Dual N-channel 30 V, 0.0155 Ohm typ., 10 A STripFET(TM) V Power MOSFET in a SO-8 packageAbsolute maximum ratingsSymbol Parameter Value UnitV Drain-source voltage (V = 0) 30 VDS GSV Gate-s ..
STS8DN3LLH5 ,Dual N-channel 30 V, 0.0155 Ohm typ., 10 A STripFET(TM) V Power MOSFET in a SO-8 packageElectrical characteristics(T =25°C unless otherwise specified)CASETable 4. On/off statesSymbol Para ..
STS8DNF3LL ,DUAL N-CHANNEL 30VFeatureSO-8Size™" strip-based process. The resulting transistorshows the best trade-off between on- ..
STS8DNH3LL ,DUAL N-CHANNEL 30VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)jTAB.2 OFFSymbol Parameter Test Co ..
STS8NF30L ,N-CHANNEL 30VSTS8NF30L®N - CHANNEL 30V - 0.018Ω - 8A SO-8STripFET™ POWER MOSFETTYPE V R IDSS DS(on) DSTS8NF30L ..
T5743P3 ,UHF ASK/FSK ReceiverBlock Diagram UHF ASK/FSKUHF ASK/FSKRemote control transmitter Remote control receiverT5743U2741BDe ..
T5743P3 ,UHF ASK/FSK ReceiverFeatures• Two Different IF Receiving Bandwidth Versions Are Available (B = 300 kHz or 600 kHz)IF• 5 ..
T5743P3-TGQ ,UHF ASK/FSK Receiverapplications are in the areas of telemetering, security technology and keyless-entrysystems. It can ..
T5744 ,UHF ASK Receiver ICFeatures• Minimal External Circuitry Requirements, no RF Components on the PC Board Except Matching ..
T5750 ,UHF ASK/FSK TransmitterFeatures• Integrated PLL Loop Filter ESD Protection also at ANT1/ANT2 (4 kV HBM/200 V MM; Except P ..
T5750 ,UHF ASK/FSK TransmitterBlock Diagram UHF ASK/FSK UHF ASK/FSKRemote control transmitter Remote control receiver1 Li cellT5 ..
STS8C5H30L
N-CHANNEL 30V -0.018 Ohm
N-CHANNEL 30V - 0.018Ω - 8A SO-8
P-CHANNEL 30V - 0.045Ω - 5A SO-8
LOW GATE CHARGE StripFET™ III MOSFET
1/11September 2004
STS8C5H30LRev. 2
STS8C5H30L2/11
Table 3: Absolute Maximum ratings ) Pulse width limited by safe operating area
Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed
Table 4: Thermal Data
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 5: On/Off
Table 6: Dynamic(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
3/11
STS8C5H30L
ELECTRICAL CHARACTERISTICS(CONTINUED)
Table 7: Switching On
Table 8: Switching Off
Table 9: Source-Drain Diodef(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
(3) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS
STS8C5H30L4/11
Figure 3: .Safe Operating n-channel
Figure 4: Output Characteristics n-channel
Figure 5: Transconductance n-channel
Figure 6: Thermal Impedance For Complemen-
tary Pair
Figure 7: Transfer Characteristics n-channel
Figure 8: Static Drain-Source On Resistance n-
channel
5/11
STS8C5H30L
Figure 9: Gate Charge vs Gate-Source Voltage
n-channel
age vs Temperature n-channel
Figure 11: Source-Drain Forward Characteris-
tics n-channel
Figure 12: Capacitance Variations n-channel
Figure 13: Normalized On Resistance vs Tem-
perature n-channel
Figure 14: Normalized BVdss vs Temperature
n-channel
STS8C5H30L6/11
Figure 15: Safe Operating p-channel
Figure 16: Output Characteristics p-channel
Figure 17: Transconductance p-channel
Figure 18: Thermal Impedance for Comple-
mentary Pair
Figure 19: Transfer Characteristics p-channel
Figure 20: Static Drain-Source On Resistance
p-channel
