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Partno	Mfg	Dc	Qty	Available	Descript
STS7C4F30L	STM	N/a	3102	avai	N-P-CHANNEL 30V- 0.018 OHM- 7A

STS7C4F30L ,N-P-CHANNEL 30V- 0.018 OHM- 7AELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STS7DNF30L ,DUAL N-CHANNEL 30VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STS7NF30L ,NSTS7NF30L®N - CHANNEL 30V - 0.021Ω - 7A SO-8STripFET™ POWER MOSFETPRELIMINARY DATATYPE V R IDSS D ..
STS7NF60L ,N-CHANNEL 60VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 60 VDS GSV Drain- ..
STS7NF60L ,N-CHANNEL 60VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STS7PF30L ,P-CHANNEL 30VELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERRWISE SPECIFIED)JOFFSymbol Parameter Test Conditi ..
T5743P3 ,UHF ASK/FSK ReceiverBlock Diagram UHF ASK/FSKUHF ASK/FSKRemote control transmitter Remote control receiverT5743U2741BDe ..
T5743P3 ,UHF ASK/FSK ReceiverFeatures• Two Different IF Receiving Bandwidth Versions Are Available (B = 300 kHz or 600 kHz)IF• 5 ..
T5743P3-TGQ ,UHF ASK/FSK Receiverapplications are in the areas of telemetering, security technology and keyless-entrysystems. It can ..
T5744 ,UHF ASK Receiver ICFeatures• Minimal External Circuitry Requirements, no RF Components on the PC Board Except Matching ..
T5750 ,UHF ASK/FSK TransmitterFeatures• Integrated PLL Loop Filter ESD Protection also at ANT1/ANT2 (4 kV HBM/200 V MM; Except P ..
T5750 ,UHF ASK/FSK TransmitterBlock Diagram UHF ASK/FSK UHF ASK/FSKRemote control transmitter Remote control receiver1 Li cellT5 ..

STS7C4F30L
N-P-CHANNEL 30V- 0.018 OHM- 7A
N-CHANNEL 30V - 0.018 Ω - 7A SO-8
P-CHANNEL 30V - 0.070 Ω - 4A SO-8
STripFET™ POWER MOSFET
1/10June 2001
STS7C4F30L TYPICAL RDS(on) (N-Channel) = 0.018 Ω TYPICAL RDS(on) (P-Channel) = 0.070 Ω STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS DC/DC CONVERTERS BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT POWER MANAGEMENT IN CELLULAR
PHONES
ABSOLUTE MAXIMUM RATINGS
(•) Pulse width limited by safe operating area. Note: P-CHANNEL MOSFET actual polarity of voltages and current
has to be reversed
INTERNAL SCHEMATIC DIAGRAM
STS7C4F30L
THERMAL DATA
(1) when mounted on 0.5 in2 pad of 2 oz. copper
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)
OFF
DYNAMIC
3/10
STS7C4F30L
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(∗) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.(•) Pulse width limited by safe operating area.
ELECTRICAL CHARACTERISTICS (continued)
STS7C4F30L
Safe Operating Area n-ch
Output Characteristics n-ch
5/10
STS7C4F30L
Gate Charge vs Gate-source Voltage n-ch Capacitance Variations n-ch
Normalized Gate Threshold Voltage vs Temperature n-ch
STS7C4F30L
Output Characteristics p-ch
Transconductance p-ch

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