STS6NF20V ,N-CHANNEL 20V 0.030 OHM 6A SO-8 2.7V-DRIVE STRIPFET II POWER MOSFETELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STS6NF20V ,N-CHANNEL 20V 0.030 OHM 6A SO-8 2.7V-DRIVE STRIPFET II POWER MOSFETSTS6NF20VN-CHANNEL 20V - 0.030 Ω - 6A SO-82.7V-DRIVE STripFET™ II POWER MOSFETTYPE V R IDSS DS(on) ..
STS6PF30L ,P-CHANEL 30VELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERRWISE SPECIFIED)JOFFSymbol Parameter Test Conditi ..
STS7C4F30L ,N-P-CHANNEL 30V- 0.018 OHM- 7AELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STS7DNF30L ,DUAL N-CHANNEL 30VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STS7NF30L ,NSTS7NF30L®N - CHANNEL 30V - 0.021Ω - 7A SO-8STripFET™ POWER MOSFETPRELIMINARY DATATYPE V R IDSS D ..
T5743P3 ,UHF ASK/FSK ReceiverBlock Diagram UHF ASK/FSKUHF ASK/FSKRemote control transmitter Remote control receiverT5743U2741BDe ..
T5743P3 ,UHF ASK/FSK ReceiverFeatures• Two Different IF Receiving Bandwidth Versions Are Available (B = 300 kHz or 600 kHz)IF• 5 ..
T5743P3-TGQ ,UHF ASK/FSK Receiverapplications are in the areas of telemetering, security technology and keyless-entrysystems. It can ..
T5744 ,UHF ASK Receiver ICFeatures• Minimal External Circuitry Requirements, no RF Components on the PC Board Except Matching ..
T5750 ,UHF ASK/FSK TransmitterFeatures• Integrated PLL Loop Filter ESD Protection also at ANT1/ANT2 (4 kV HBM/200 V MM; Except P ..
T5750 ,UHF ASK/FSK TransmitterBlock Diagram UHF ASK/FSK UHF ASK/FSKRemote control transmitter Remote control receiver1 Li cellT5 ..
STS6NF20V
N-CHANNEL 20V 0.030 OHM 6A SO-8 2.7V-DRIVE STRIPFET II POWER MOSFET
1/8August 2002
STS6NF20VN-CHANNEL 20V - 0.030 Ω - 6A SO-8
2.7V-DRIVE STripFET™ II POWER MOSFET TYPICAL RDS(on) = 0.030 Ω @ 4.5 V TYPICAL RDS(on) = 0.037 Ω @ 2.7 V ULTRA LOW THRESHOLD
GATE DRIVE (2.7 V) STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
DESCRIPTIONThis Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS DC MOTOR DRIVE DC-DC CONVERTERS BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT POWER MANAGEMENT IN
PORTABLE/DESKTOP PCs
ABSOLUTE MAXIMUM RATINGS(•) Pulse width limited by safe operating area.
INTERNAL SCHEMATIC DIAGRAM
STS6NF20V
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)OFF
ON (*)
DYNAMIC
3/8
STS6NF20VSWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ELECTRICAL CHARACTERISTICS (continued)
STS6NF20V Transfer Characteristics
5/8
STS6NF20VNormalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature . .
STS6NF20V
Fig. 2: Gate Charge test Circuit
Fig. 3: Test Circuit For Diode Recovery Behaviour
Fig. 1: Switching Times Test Circuits For Resistive Load
