STS5PF30L ,PSTS5PF30LP-CHANNEL 30V - 0.070 Ω - 5A SO-8STRIPFET™ POWER MOSFETTYPE V R IDSS DS(on) DSTS5PF30L 30V ..
STS6DNF30L ,DUAL N-CHANNEL 30VSTS6DNF30L®DUAL N - CHANNEL 30V - 0.022Ω - 6A SO-8STripFET™ POWER MOSFETTYPE V R IDSS DS(on) DSTS6 ..
STS6DNF30V ,DUAL N-CHANNEL 30V 0.026 OHM 6A SO-8 2.5V DRIVE STRIPFET II POWER MOSFETELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STS6NF20V ,N-CHANNEL 20V 0.030 OHM 6A SO-8 2.7V-DRIVE STRIPFET II POWER MOSFETELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STS6NF20V ,N-CHANNEL 20V 0.030 OHM 6A SO-8 2.7V-DRIVE STRIPFET II POWER MOSFETSTS6NF20VN-CHANNEL 20V - 0.030 Ω - 6A SO-82.7V-DRIVE STripFET™ II POWER MOSFETTYPE V R IDSS DS(on) ..
STS6PF30L ,P-CHANEL 30VELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERRWISE SPECIFIED)JOFFSymbol Parameter Test Conditi ..
T520V227M004ASE015 , CONDUCTIVE POLYMER CHIP CAPACITORS
T520V227M006ATE015 , CONDUCTIVE POLYMER CHIP CAPACITORS
T5743P3 ,UHF ASK/FSK ReceiverBlock Diagram UHF ASK/FSKUHF ASK/FSKRemote control transmitter Remote control receiverT5743U2741BDe ..
T5743P3 ,UHF ASK/FSK ReceiverFeatures• Two Different IF Receiving Bandwidth Versions Are Available (B = 300 kHz or 600 kHz)IF• 5 ..
T5743P3-TGQ ,UHF ASK/FSK Receiverapplications are in the areas of telemetering, security technology and keyless-entrysystems. It can ..
T5744 ,UHF ASK Receiver ICFeatures• Minimal External Circuitry Requirements, no RF Components on the PC Board Except Matching ..
STS5PF30L
P
1/8February 2002
STS5PF30LP-CHANNEL 30V - 0.070 Ω - 5A SO-8
STRIPFET™ POWER MOSFET TYPICAL RDS(on) = 0.070 Ω STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE
DESCRIPTIONThis Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS BATTERY MANAGMENT IN NOMADIC
EQUIPMENT POWER MANAGMENT IN CELLULAR
PHONES
ABSOLUTE MAXIMUM RATINGS(•) Pulse width limited by safe operating area. Note: For the P-CHANNEL MOSFET actual polarity of voltages and
current has to be reversed
INTERNAL SCHEMATIC DIAGRAM
STS5PF30L
THERMAL DATA(*) Mounted on FR-4 board
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)OFF
ON (*)
DYNAMIC
3/8
STS5PF30LSWITCHING ON(*)
SWITCHING OFF(*)
SOURCE DRAIN DIODE(*)
(*)Pulse width [ 300 μs, duty cycle 1.5 %.
(•)Pulse width limited by TJMAX
ELECTRICAL CHARACTERISTICS (continued)
STS5PF30L Capacitance Variations
5/8
STS5PF30LNormalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature .
STS5PF30L
Fig. 2: Gate Charge test Circuit
Fig. 3: Test Circuit For Diode Recovery Behaviour
Fig. 1: Switching Times Test Circuits For Resistive Load
