STS5NS150 ,N-CHANNEL 150VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 150 VDS GSV Drain ..
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STS5NS150
N-CHANNEL 150V
1/8May 2002
STS5NS150N-CHANNEL 150V - 0.075 Ω - 5A SO-8
LOW GATE CHARGE STripFET™ II POWER MOSFET TYPICAL RDS(on) = 0.075 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTIONThis MOSFET series realized with STMicroelectronics
unique STripFET process has specifically been designed
to minimize input capacitance and gate charge. It is
therefore suitable as primary switch in advanced high-
efficiency, high-frequency isolated DC-DC converters for
Telecom and Computer applications. It is also intended
for any applications with low gate drive requirements.
APPLICATIONS HIGH-EFFICIENCY DC-DC CONVERTERS UPS AND MOTOR CONTROL
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS(•) Pulse width limited by safe operating area.
STS5NS150
THERMAL DATA(*) When mounted on FR-4 board with 0.5 in2 pad of Cu.
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)OFF
ON (*)
DYNAMIC
3/8
STS5NS150SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ELECTRICAL CHARACTERISTICS (continued)
STS5NS150 Capacitance Variations
5/8
STS5NS150Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature Normalized Breakdown Voltage Temperature .
STS5NS150
Fig. 2: Gate Charge test Circuit
Fig. 3: Test Circuit For Diode Recovery Behaviour
Fig. 1: Switching Times Test Circuits For Resistive Load
