STS5N150 ,N-CHANNEL 150VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STS5N15F3 ,N-channel 150 V, 0.045 Ω, 5 A, SO-8 STripFET͐2;2; III Power MOSFETElectrical characteristics (T = 25 °C unless otherwise specified).J Table 5. On/off statesSymbol Pa ..
STS5N15F3 ,N-channel 150 V, 0.045 Ω, 5 A, SO-8 STripFET͐2;2; III Power MOSFETAbsolute maximum ratingsSymbol Parameter Value UnitV Drain-source voltage (V = 0) 150 VDS GSV Gate- ..
STS5N15F4 ,N-channel 150 V, 0.057 Ohm, 5 A, SO-8 STripFET(TM) DeepGATE(TM) Power MOSFETElectrical characteristics (T = 25 °C unless otherwise specified)J Table 5. On/off statesSymbol Par ..
STS5NF60L ,N-CHANNEL 60VSTS5NF60L®N - CHANNEL 60V - 0.045Ω - 5A SO-8STripFET™ POWER MOSFETPRELIMINARY DATATYPE V R IDSS DS( ..
STS5NS150 ,N-CHANNEL 150VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 150 VDS GSV Drain ..
T520T476M006ATE070 , (Low ESR, Surge Robust) 10 pcs.
T520V157M006ASE015 , CONDUCTIVE POLYMER CHIP CAPACITORS
T520V227M004ASE015 , CONDUCTIVE POLYMER CHIP CAPACITORS
T520V227M006ATE015 , CONDUCTIVE POLYMER CHIP CAPACITORS
T5743P3 ,UHF ASK/FSK ReceiverBlock Diagram UHF ASK/FSKUHF ASK/FSKRemote control transmitter Remote control receiverT5743U2741BDe ..
T5743P3 ,UHF ASK/FSK ReceiverFeatures• Two Different IF Receiving Bandwidth Versions Are Available (B = 300 kHz or 600 kHz)IF• 5 ..
STS5N150
N-CHANNEL 150V
1/6
TARGET DATAJune 2003
STS5N150N-CHANNEL 150V - 0.045 Ω - 5A SO-8
LOW GATE CHARGE STripFET™ POWER MOSFET TYPICAL RDS(on) = 0.045 Ω EXTREMELY HIGH dv/dt CAPABILITY EXTREMELY LOW GATE CHARGE
DESCRIPTIONThis MOSFET series realized with STMicroelectronics
unique STripFET process has specifically been designed
to minimize input capacitance and gate charge. It is
therefore suitable as primary switch in advanced high-
efficiency, high-frequency isolated DC-DC converters for
Telecom and Computer applications. It is also intended
for any applications with low gate drive requirements.
APPLICATIONS HIGH-EFFICIENCY DC-DC CONVERTERS UPS AND MOTOR CONTROL
Ordering Information
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS(•) Pulse width limited by safe operating area.
STS5N150
THERMAL DATA(*) When Mounted on 1 inch2 FR-4 board, 2 oz of Cu and t [ 10 sec.
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)OFF
ON (*)
DYNAMIC
3/6
STS5N150SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ELECTRICAL CHARACTERISTICS (continued)
STS5N150
Fig. 2: Gate Charge test Circuit
Fig. 1: Switching Times Test Circuits For Resistive Load
STS5N150. consequences
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by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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