STS5DNE30L ,DUAL N-CHANNEL 30VSTS5DNE30L®N - CHANNEL 30V - 0.039Ω - 5A SO-8STripFET™ POWER MOSFETPRELIMINARY DATATYPE V R IDSS DS ..
STS5DNE30L ,DUAL N-CHANNEL 30VFeatureSize™ " strip-based process. The resultingSO-8transistor shows extremely high packing densit ..
STS5DNF20V ,N-CHANNEL 20VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STS5DNF60L ,Dual N-channel 60VElectrical characteristics(T = 25 °C unless otherwise specified)CASETable 4. On /off statesSymbol P ..
STS5N150 ,N-CHANNEL 150VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STS5N15F3 ,N-channel 150 V, 0.045 Ω, 5 A, SO-8 STripFET͐2;2; III Power MOSFETElectrical characteristics (T = 25 °C unless otherwise specified).J Table 5. On/off statesSymbol Pa ..
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T520V157M006ASE015 , CONDUCTIVE POLYMER CHIP CAPACITORS
T520V227M004ASE015 , CONDUCTIVE POLYMER CHIP CAPACITORS
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T5743P3 ,UHF ASK/FSK ReceiverBlock Diagram UHF ASK/FSKUHF ASK/FSKRemote control transmitter Remote control receiverT5743U2741BDe ..
STS5DNE30L
DUAL N-CHANNEL 30V
STS5DNE30LN - CHANNEL 30V - 0.039Ω - 5A SO-8
STripFET POWER MOSFET
PRELIMINARY DATA TYPICAL RDS(on) = 0.039 Ω STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE
DESCRIPTION This Power MOSFET is the latest development of
STMicroelectronics unique " Single Feature
Size " strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
APPLICATIONS DC MOTOR DRIVE DC-DC CONVERTERS BATTERY MANAGMENT IN NOMADIC
EQUIPMENT POWER MANAGEMENT IN
PORTABLE/DESKTOP PCs
December 1998
ABSOLUTE MAXIMUM RATINGS(•) Pulse width limited by safe operating area
1/5
THERMAL DATA
(*) Mounted on FR-4 board (t ≤ 10sec)
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
OFF
ON (∗)
DYNAMIC
STS5DNE30L2/5
ELECTRICAL CHARACTERISTICS (continued)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(∗) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
STS5DNE30L3/5
STS5DNE30L4/5
. consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 1998 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
http://
STS5DNE30L5/5
:
www.ic-phoenix.com
.
