STS4DNFS30L ,N-CHANNEL 30VELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STS4DNF-S30L ,N-CHANNEL 30VSTS4DNFS30LN-CHANNEL 30V - 0.044Ω - 4A SO-8STripFET™ II MOSFET PLUS SCHOTTKY RECTIFIERMAIN PRODUCT ..
STS4DPF20L ,DUAL P-CHANNEL 20VELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERWISE SPECIFIED)CASEOFFSymbol Parameter Test Condi ..
STS4DPF30L ,DUAL P-CHANNEL 30V ABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 30 VDS GSV Drain- ..
STS4DPFS20L ,P-CHANNEL 20V 0.07 OHM 4A SO-8 STRIPFET MOSFET PLUS SCHOTTKY RECTIFIERELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STS4DPFS2LS ,P-CHANNEL 20V 0.06 OHM 4A SO-8 STRIPFET MOSFET PLUS SCHOTTKY RECTIFIERELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
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STS4DNFS30L-STS4DNF-S30L
N-CHANNEL 30V
1/8July 2002
STS4DNFS30LN-CHANNEL 30V - 0.044Ω - 4A SO-8
STripFET™ II MOSFET PLUS SCHOTTKY RECTIFIER
DESCRIPTIONThis product associates the latest low voltage
STripFET™ in n-channel version to a low drop
Schottky diode. Such configuration is extremely ver-
satile in implementing, a large variety of DC-DC
converters for printers, portable equipment, and cel-
lular phones.
MOSFET ABSOLUTE MAXIMUM RATINGS
SCHOTTKY ABSOLUTE MAXIMUM RATINGS(•)Pulse width limited by safe operating area
STS4DNFS30L
THERMAL DATA
MOSFET ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF
ON (1)
DYNAMIC
3/8
STS4DNFS30L
Thermal Impedance
ELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area.
Safe Operating Area STS4DNFS30L
Gate Charge vs Gate-source Voltage
Static Drain-source On Resistance
Output Characteristics
Transconductance
Capacitance Variations
5/8
STS4DNFS30L
Source-drain Diode Forward Characteristics
Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature
STS4DNFS30L
Fig. 3: Test Circuit For Diode Recovery Behaviour
Fig. 2: Gate Charge test CircuitFig. 1: Switching Times Test Circuit For Resistive Load
