STS3DNF30L ,N-CHANNEL 30VSTS3DNF30L®N - CHANNEL 30V - 0.055Ω - 3.5A - SO-8STripFET™ POWER MOSFETPRELIMINARY DATATYPE V R I ..
STS3DNF30L ,N-CHANNEL 30VFeatureSO-8Size™ " strip-based process. The resulting transi-stor shows extremely high packing dens ..
STS3DPF20V ,DUAL P-CHANNEL 20VELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERWISE SPECIFIED)CASEOFFSymbol Parameter Test Condi ..
STS3DPF30L ,DUAL P-CHANNEL 30VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 30 VDS GSV Drain- ..
STS3DPF60L ,DUAL P-CHANNEL 60VAbsolute Maximum ratingsSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 60 VDS GSV Drain- ..
STS3DPFS30L ,P-CHANNEL 30VELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
T520D157M006ASE015 , CONDUCTIVE POLYMER CHIP CAPACITORS
T520D337M006ATE015 , Using the PWR091EVM Dual-Output DC/DC Analog With PMBus Interface
T520D477M004ATE015 , CONDUCTIVE POLYMER CHIP CAPACITORS
T520T476M006ATE070 , (Low ESR, Surge Robust) 10 pcs.
T520V157M006ASE015 , CONDUCTIVE POLYMER CHIP CAPACITORS
T520V227M004ASE015 , CONDUCTIVE POLYMER CHIP CAPACITORS
STS3DNF30L
N-CHANNEL 30V
STS3DNF30LN - CHANNEL 30V - 0.055Ω - 3.5A - SO-8
STripFET POWER MOSFET
PRELIMINARY DATA TYPICAL RDS(on) = 0.055 Ω STANDARD OUTLINE FOR EASY
AUTOMATED SURFAC MOUNT ASSEMBLY LOW THRESHOLD DRIVE
DESCRIPTION This Power Mosfet is the latest development of
STMicroelectronics unique "Single Feature
Size" strip-based process. The resulting transi-
stor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility
APPLICATIONS DC MOTOR DRIVE DC-DC CONVERTERS BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT POWER MANAGEMENT IN
PORTABLE/DESKTOP PCS
ABSOLUTE MAXIMUM RATINGS(•) Pulse width limited by safe operating area
October 2000
1/5
THERMAL DATA(*) Mounted on FR-4 board (t ≤ 10 sec)
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
OFF
ON (∗)
DYNAMIC
STS3DNF30L2/5
ELECTRICAL CHARACTERISTICS (continued)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(∗) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
STS3DNF30L3/5
STS3DNF30L4/5
. consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2000 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
http://
STS3DNF30L5/5
:
www.ic-phoenix.com
.
