STS3DNE60L ,DUAL N-CHANNEL 60VSTS3DNE60L®N - CHANNEL 60V - 0.065W - 3A SO-8STripFET
STS3DNE60L
DUAL N-CHANNEL 60V
STS3DNE60LN - CHANNEL 60V - 0.065W - 3A SO-8
STripFET POWER MOSFET
PRELIMINARY DATA TYPICAL RDS(on) = 0.065 W STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE
DESCRIPTION This Power MOSFET is the latest development of
STMicroelectronics unique " Single Feature
Size " strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
APPLICATIONS DC MOTOR DRIVE DC-DC CONVERTERS BATTERY MANAGMENT IN NOMADIC
EQUIPMENT POWER MANAGEMENT IN
PORTABLE/DESKTOP PCs
May 1999
ABSOLUTE MAXIMUM RATINGS(•) Pulse width limited by safe operating area
1/5
THERMAL DATA
(*) Mounted on FR-4 board (t £ 10 sec)
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
OFF
ON (*)
DYNAMIC
STS3DNE60L2/5
ELECTRICAL CHARACTERISTICS (continued)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE ) Pulsed: Pulse duration = 300 m s, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
STS3DNE60L3/5
STS3DNE60L4/5
. consequencesof use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 1999 STMicroelectronics – Printed in Italy – All Rights Reserved
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STS3DNE60L5/5
:
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