STS2DNE60 ,NABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)60 VDS GSV Drain-g ..
STS2DNE60 ,NELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STS2DNF30L ,N-CHANNEL 30VSTS2DNF30LN-CHANNEL 30V - 0.09 Ω - 3A SO-8STripFET™ POWER MOSFETTYPE V R IDSS DS(on) DSTS2DNF30L 30 ..
STS2DNFS30L ,N-CHANNEL 30V 0.09 OHM 3A SO-8 STRIPFET II MOSFET PLUS SCHOTTKY RECTIFIERELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STS2DPF20V ,DUAL P-CHANNEL 20V 0.014 OHM 2A SO-8 2.7V-DRIVE STRIPFET II POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 20 VDS GSV Drain- ..
STS2DPF80 ,DUAL P-CHANNEL 80VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 80 VDS GSV Drain- ..
T5034 , TELECOMMUNICATIONS PRODUCTS
T5039 , TELECOMMUNICATIONS PRODUCTS
T5042 , TELECOMMUNICATIONS PRODUCTS
T520D157M006ASE015 , CONDUCTIVE POLYMER CHIP CAPACITORS
T520D337M006ATE015 , Using the PWR091EVM Dual-Output DC/DC Analog With PMBus Interface
T520D477M004ATE015 , CONDUCTIVE POLYMER CHIP CAPACITORS
STS2DNE60
N
1/8February 2001
STS2DNE60DUAL N-CHANNEL 60V - 0.180Ω - 2A SO-8
STripFET™ POWER MOSFET TYPICAL RDS(on) = 0.180Ω LOW THRESHOLD GATE DRIVE STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
DESCRIPTIONThis Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature Size™"
strip-based process. The resulting transistor shows
extremely high packing density for low on-resis-
tance, rugged avalanche characteristics and less
critical alignment steps therefore a remarkable
manufacturing reproducibility.
APPLICATIONS DC MOTOR DRIVE DC-DC CONVERTERS BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT POWER MANAGEMENT IN PORTABLE/
DESKTOP PCS
ABSOLUTE MAXIMUM RATINGS(�) Pulse width limited by safe operating area
STS2DNE60
THERMAL DATA
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF (1)
DYNAMIC
3/8
STS2DNE60
ELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area.
Thermal ImpedanceSafe Operating Area
STS2DNE60
Gate Charge vs Gate-source Voltage Capacitance Variations
Tranconductance
Output Characteristics
5/8
STS2DNE60
Source-drain Diode Forward Characteristics Normalized Drain-Source Breakdown vs
Temperature
Normalized On Resistance vs Temperature
STS2DNE60
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test Circuit
Fig. 3: Switching Times Test Circuit For Resistive Load
