STS1HNK60 ,N-CHANNEL 600VSTS1HNK60N-CHANNEL 600V - 8Ω -0.3A SO-8SuperMESH™Power MOSFETTYPE V R I PwDSS DS(on) DSTS1HNK60 600 ..
STS1NC60 ,N-CHANNEL 600V 12 OHM 0.3A SO-8 POWERMESH II MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)DS GS 600 VV Drain ..
STS1NK60Z ,N-CHANNEL 600V 13 OHM 0.25A SO-8 ZENER-PROTECTED SUPERMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0)600 VDS GSV Drain-g ..
STS2300 , N-Channel E nhancement Mode Field EffectTransistor
STS2300 , N-Channel E nhancement Mode Field EffectTransistor
STS2301 , P-Channel E nhancement Mode Field Effect Transistor
T5002 , TELECOMMUNICATIONS PRODUCTS
T5004 , TELECOMMUNICATIONS PRODUCTS
T5005 , TELECOMMUNICATIONS PRODUCTS
T5006 , TELECOMMUNICATIONS PRODUCTS
T5007NL , ISDN S-INTERFACE LOW PROFILE DUAL SMT TRANSFORMERS
T5008 , TELECOMMUNICATIONS PRODUCTS
STS1HNK60
N-CHANNEL 600V
1/8August 2003
STS1HNK60N-CHANNEL 600V- 8Ω -0.3A SO-8
SuperMESH™Power MOSFET TYPICAL RDS(on)=8Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED NEW HIGH VOLTAGE BENCHMARK
DESCRIPTIONThe SuperMESH™ seriesis obtained through an
extreme optimizationof ST’s well established strip-
based PowerMESH™ layout.In additionto pushing
on-resistance significantly down, special careis tak-to ensurea very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full rangeof high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
APPLICATIONS SWITCH MODE LOW POWER SUPPLIES
(SMPS) LOW POWER, LOW COST CFL (COMPACT
FLUORESCENT LAMPS) LOW POWER BATTERY CHARGERS
ORDERING INFORMATION
STS1HNK602/8
ABSOLUTE MAXIMUM RATINGS) Pulse width limitedby safe operating area
(1)ISD ≤0.3A, di/dt ≤100A/μs, VDD≤ V(BR)DSS,Tj≤ TJMAX.
THERMAL DATA
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
3/8
STS1HNK60
ELECTRICAL CHARACTERISTICS (CONTINUED)
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration=300μs, duty cycle1.5%. Pulse width limitedby safe operating area.
STS1HNK604/8
Thermal Impedance
Static Drain-source On ResistanceTransconductance
Output Characteristics
Safe Operating Area
5/8
STS1HNK60
Normalized BVDSSvs Temperature
NormalizedNormalized Gate Threshold Voltagevs Temp.
Gate Chargevs Gate-source Voltage
Source-drain Diode Forward Characteristics
STS1HNK606/8
Fig.5: Test Inductive
Fig.4: Gate Charge test Circuit
Fig.
Fig.3: Switching
Resistive Load
