STS1DNC45 ,DUAL N-CHANNEL 450VELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERWISE SPECIFIED)CASEOFFSymbol Parameter Test Condi ..
STS1DNC45 ,DUAL N-CHANNEL 450VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 450 VDS GSV Drain ..
STS1HNK60 ,N-CHANNEL 600VSTS1HNK60N-CHANNEL 600V - 8Ω -0.3A SO-8SuperMESH™Power MOSFETTYPE V R I PwDSS DS(on) DSTS1HNK60 600 ..
STS1NC60 ,N-CHANNEL 600V 12 OHM 0.3A SO-8 POWERMESH II MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)DS GS 600 VV Drain ..
STS1NK60Z ,N-CHANNEL 600V 13 OHM 0.25A SO-8 ZENER-PROTECTED SUPERMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0)600 VDS GSV Drain-g ..
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STS1DNC45
DUAL N-CHANNEL 450V
1/8September 2002
STS1DNC45DUAL N-CHANNEL 450V - 4.1Ω - 0.4A SO-8
SuperMESH™ POWER MOSFET
(1)ISD ≤ 0.4 A, di/dt ≤100A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. TYPICAL RDS(on) = 4.1Ω STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY GATE CHARGE MINIMIZED
DESCRIPTIONThe SuperMESH™ series is obtained through an
extreme optimization of ST’s well established strip-
based PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special care is tak-
en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full range of high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
APPLICATIONS SWITCH MODE LOW POWER SUPPLIES
(SMPS) DC-DC CONVERTERS LOW POWER, LOW COST CFL (COMPACT
FLUORESCENT LAMPS) LOW POWER BATTERY CHARGERS
ABSOLUTE MAXIMUM RATINGS(�) Pulse width limited by safe operating area
STS1DNC45
THERMAL DATA(#) When Mounted on FR4 board (Steady State)
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF (1)
DYNAMIC
3/8
STS1DNC45
ELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area.
Safe Operating Area Thermal Impedance
STS1DNC45
Output Characteristics
Gate Charge vs Gate-source Voltage
Transconductance Static Drain-source On Resistance
5/8
STS1DNC45
Maximum Avalanche Energy vs Temperature
Normalized Gate Threshold Voltage vs Temp. Normalized On Resistance vs Temperature
Max Id Current vs Tc
Source-drain Diode Forward Characteristics Normalized BVDSS vs Temperature
STS1DNC45
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test Circuit
Fig. 3: Switching Times Test Circuit For Resistive Load
