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Partno	Mfg	Dc	Qty	Available	Descript
STS12N3LLH5	ST	N/a	5000	avai	N-channel 30 V, 0.0063 Ohm, 12 A, SO-8, STripFET(TM) Power MOSFET

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STS12N3LLH5
N-channel 30 V, 0.0063 Ohm, 12 A, SO-8, STripFET(TM) Power MOSFET
June 2012 Doc ID 17152 Rev 3 1/13
STS12N3LLH5
N-channel 30 V , 0.0068 Ω , 12 A, SO-8
STripFET™ V Power MOSFET
Datasheet — production data
Features R DS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate charge High avalanche ruggedness Low gate drive power losses
Application Switching applications
Description
This device is an N-channel Power MOSFET
developed using STMicroelectronics’
STripFET™V technology. The device has been
optimized to achieve very low on-state resistance,
contributing to an FOM that is among the best in
its class.
The value is rated according Rthj-pcb
Table 1. Device summary
Contents STS12N3LLH5
2/13 Doc ID 17152 Rev 3
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
STS12N3LLH5 Electrical ratings
Doc ID 17152 Rev 3 3/13
1 Electrical ratings
Table 2. Absolute maximum ratings The value is rated according Rthj-pcb Pulse width limited by safe operating area
Table 3. Thermal resistance When mounted on FR-4 board of 1inch², 2oz Cu, t < 10sec
Electrical characteristics STS12N3LLH5
4/13 Doc ID 17152 Rev 3
2 Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 4. On/off states
Table 5. Dynamic
Table 6. Switching times
STS12N3LLH5 Electrical characteristics
Doc ID 17152 Rev 3 5/13
Table 7. Source drain diode Pulse width limited by safe operating area Pulsed: pulse duration=300µs, duty cycle 1.5%
Electrical characteristics STS12N3LLH5
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Thermal impedance
Figure 4. Output characteristics Figure 5. Transfer characteristics
Figure 6. Normalized BVDSS vs temperature Figure 7. Static drain-source on-resistance
STS12N3LLH5 Electrical characteristics
Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations
Figure 10. Normalized gate threshold voltage
vs temperature
Figure 11. Normalized on-resistance vs
temperature
Figure 12. Source-drain diode forward
characteristics