STS11NF3LL ,N-CHANNEL 30VELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERWISE SPECIFIED)CASEOFFSymbol Parameter Test Condi ..
STS12N3LLH5 ,N-channel 30 V, 0.0063 Ohm, 12 A, SO-8, STripFET(TM) Power MOSFETElectrical characteristics(T =25°C unless otherwise specified)CASETable 4. On/off statesSymbol Para ..
STS12NF30L ,N-CHANNEL 30VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STS12NH3LL ,N-CHANNEL 30VELECTRICAL CHARACTERISTICS (T =25°C UNLESS OTHERWISE SPECIFIED)CASETable 5: On /OffSymbol Parameter ..
STS17NF3LL ,N-CHANNEL 30V 0.0045 OHM 17A SO-8 STRIPFET MOSFET FOR DC-DC CONVERSIONELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STS17NH3LL , N-channel 30 V - 0.004 Ω - 17 A - SO-8 STripFET™ Power MOSFET for DC-DC conversion
T5002 , TELECOMMUNICATIONS PRODUCTS
T5004 , TELECOMMUNICATIONS PRODUCTS
T5005 , TELECOMMUNICATIONS PRODUCTS
T5006 , TELECOMMUNICATIONS PRODUCTS
T5007NL , ISDN S-INTERFACE LOW PROFILE DUAL SMT TRANSFORMERS
T5008 , TELECOMMUNICATIONS PRODUCTS
STS11NF3LL
N-CHANNEL 30V
1/8October 2001
STS11NF3LLN-CHANNEL 30V - 0.008Ω - 11A SO-8
LOW GATE CHARGE STripFET™ II POWER MOSFET
(*)Value limited by wires bonding TYPICAL RDS(on) = 0.011Ω @ 4.5V OPTIMAL RDS(on) Qg TRADE-OFF @4.5V CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED
DESCRIPTIONThis application specific Power MOSFET is
the third genaration of STMicroelectronics
unique “ Single Feature Size” strip-based pro-
cess. The resulting transistor shows the best
trade-off between on-resistance and gate
charge. When used as high and low side in
buck regulators, it gives the best performance
in terms of both conduction and switching
losses. This is extremely important for mother-
boards where fast switching and high efficien-
cy are of paramount importance.
APPLICATIONS SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY CPU CORE DC/DC
CONVERTERS FOR MOBILE PCs
ABSOLUTE MAXIMUM RATINGS(�) Pulse width limited by safe operating area
STS11NF3LL
THERMAL DATA(#) When Mounted on a 1inch2 pad
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF (1)
DYNAMIC
3/8
STS11NF3LL
ELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area.
Thermal ImpedanceSafe Operating Area
STS11NF3LL
Gate Charge vs Gate-source Voltage
Transconductance
Capacitance Variations
Output Characteristics
Static Drain-source On Resistance
Transfer Characteristics
5/8
STS11NF3LL
Normalized On Resistance vs TemperatureNormalized Gate Thereshold Voltage vs Temp.
Source-drain Diode Forward Characteristics
STS11NF3LL
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test Circuit
Fig. 3: Switching Times Test Circuit For Resistive Load
