STQ1NE10L-AP ,N-CHANNEL 100VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)100 VDS GSV Drain- ..
STQ1NK60ZR ,N-CHANNEL 600VFeatures Figure 1: PackageTYPE V R I PwDSS DS(on) DSTQ1NK60ZR 600 V < 15 Ω 0.3 A 3 WSTD1LNK60Z-1 60 ..
STQ1NK60ZR-AP ,N-CHANNEL 600VFEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically bee ..
STQ1NK60ZR-AP ,N-CHANNEL 600VAPPLICATIONS
STQ1NE10L-AP
N-CHANNEL 100V
1/9December 2002
STQ1NE10LN-CHANNEL 100V - 0.3 Ω - 1A TO-92
STripFET™ POWER MOSFET TYPICAL RDS(on) = 0.3 Ω EXCEPTIONAL HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED AVALANCHE RUGGED TECHNOLOGY LOW THRESHOLD DRIVE
DESCRIPTIONThis Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS DC MOTOR CONTROL (DISK DRIVES, etc.) DC-DC & DC-AC CONVERTERS SYNCHRONOUS RECTIFICATION
ABSOLUTE MAXIMUM RATINGS(•) Pulse width limited by safe operating area.(1) Related to Rthj -l (2) ISD ≤1A, di/dt ≤200A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
(3) Starting Tj = 25 oC, ID = 1A, VDD = 50V
INTERNAL SCHEMATIC DIAGRAM
STQ1NE10L
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)OFF
ON (*)
DYNAMIC
3/9
STQ1NE10LSWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ELECTRICAL CHARACTERISTICS (continued)
STQ1NE10L
5/9
STQ1NE10LNormalized Gate Threshold Voltage vs Temperature . .
Fig. 3: Switching Times Test Circuits For Resistive Load
Fig. 4: Gate Charge test CircuitAnd Diode Recovery Times
