STQ1NC45 ,N-CHANNEL 450VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTD2NC45-1 STQ1NC45V Drain-source Voltage (V =0) ..
STQ1NC45R ,N-CHANNEL 450V 4.1OHM 1.5A IPAK/TO-92 SUPERMESH POWER MOSFET
STQ1NC45R-AP ,N-CHANNEL 450V 4.1OHM 1.5A DPAK/IPAK/TO-92 SUPERMESH POWER MOSFET
STQ1NE10L-AP ,N-CHANNEL 100VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)100 VDS GSV Drain- ..
STQ1NK60ZR ,N-CHANNEL 600VFeatures Figure 1: PackageTYPE V R I PwDSS DS(on) DSTQ1NK60ZR 600 V < 15 Ω 0.3 A 3 WSTD1LNK60Z-1 60 ..
STQ1NK60ZR-AP ,N-CHANNEL 600VFEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically bee ..
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T15M256A , 32K X 8 LOW POWER CMOS STATIC RAM
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STQ1NC45
N-CHANNEL 450V
1/11June 2003
STD2NC45-1
STQ1NC45N-CHANNEL 450V- 4.1Ω - 1.5 A IPAK/ TO-92
SuperMESH™Power MOSFET TYPICAL RDS(on)= 4.1Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED NEW HIGH VOLTAGE BENCHMARK
DESCRIPTIONThe SuperMESH™ seriesis obtained through an
extreme optimizationof ST’s well established strip-
based PowerMESH™ layout.In additionto pushing
on-resistance significantly down, special careis tak-to ensurea very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full rangeof high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
APPLICATIONS SWITCH MODE LOW POWER SUPPLIES
(SMPS) LOW POWER, LOW COST CFL (COMPACT
FLUORESCENT LAMPS) LOW POWER BATTERY CHARGERS
ORDERING INFORMATION
STD2NC45-1, STQ1NC452/11
ABSOLUTE MAXIMUM RATINGS) Pulse width limitedby safe operating area
(1)ISD ≤0.5A, di/dt ≤100A/μs, VDD≤ V(BR)DSS,Tj≤ TJMAX.
THERMAL DATA
AVALANCHE CHARACTERISTICS
3/11
STD2NC45-1, STQ1NC45
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration=300μs, duty cycle1.5%. Pulse width limitedby safe operating area.
STD2NC45-1, STQ1NC454/11
Safe Operating Area For IPAK
Thermal Impedance For TO-92Safe Operating Area For TO-92
Thermal Impedance For IPAK
Output Characteristics
5/11
STD2NC45-1, STQ1NC45
Normalized Gate Threshold Voltagevs Temp. Normalized On Resistancevs Temperature
Gate Chargevs Gate-source Voltage
Transconductance Static Drain-source On Resistance
STD2NC45-1, STQ1NC456/11
MaximumMaxId Currentvs Tc
Source-drain Diode Forward Characteristics Normalized BVDSSvs Temperature
