STPSC806D ,600 V power Schottky silicon carbide diodeFeatures■ No or negligible reverse recovery■ Switching behavior independent of temperatureAK■ Parti ..
STPTIC-47G1H5 ,BST tunable integrated RF capacitorapplications. These • Capacitor bias is DC blockedtunable capacitances are controlled through a • F ..
STQ-1016Z , 250 - 1000 MHz Direct Quadrature Modulator
STQ-1016Z , 250 - 1000 MHz Direct Quadrature Modulator
STQ1HNK60R ,N-CHANNEL 600VAbsolute Maximum ratingsSymbol Parameter Value UnitDPAK / IPAK TO-92 SOT-223V Drain-source Voltage ..
STQ1HNK60R-AP ,N-CHANNEL 600VFeatures Figure 1: PackageTYPE V R I PwDSS DS(on) DSTD1NK60 600 V < 8.5 Ω 1 A 30 WSTD1NK60-1 600 V ..
T14L1024N , 128K X 8 HIGH SPEED CMOS STATIC RAM
T14L1024N , 128K X 8 HIGH SPEED CMOS STATIC RAM
T14M256A , 32K X 8 HIGH SPEED CMOS STATIC RAM
T14M256A-8J , 32K X 8 HIGH SPEED CMOS STATIC RAM
T15M256A , 32K X 8 LOW POWER CMOS STATIC RAM
T15M256A , 32K X 8 LOW POWER CMOS STATIC RAM
STPSC806D
600 V power Schottky silicon carbide diode
November 2010 Doc ID 16286 Rev 3 1/8
STPSC806600 V power Schottky silicon carbide diode
Features No or negligible reverse recovery Switching behavior independent of
temperature Particularly suitable in PFC boost diode
function
DescriptionThe SiC diode is an ultrahigh performance power
Schottky diode. It is manufactured using a silicon
carbide substrate. The wide band gap material
allows the design of a Schottky diode structure
with a 600 V rating. Due to the Schottky
construction no recovery is shown at turn-off and
ringing patterns are negligible. The minimal
capacitive turn-off behavior is independent of
temperature.
ST SiC diodes will boost the performance of PFC
operations in hard switching conditions.
Table 1. Device summary
Characteristics STPSC806
2/8 Doc ID 16286 Rev 3
1 Characteristics
o evaluate the conduction losses use the following equation:
P = 1.2 x IF(AV) + 0.113 x IF2 (RMS)
Table 2. Absolute ratings (limiting values at 25 °C unless otherwise specified)
Table 3. Thermal resistance
Table 4. Static electrical characteristics tp = 10 ms, δ < 2% tp = 500 µs, δ < 2%
Table 5. Other parameters
STPSC806 Characteristics
Doc ID 16286 Rev 3 3/8
Figure 1. Forward voltage drop versus
forward current (typical values)
Figure 2. Reverse leakage current versus
reverse voltage applied
(maximum values)
Figure 3. Peak forward current versus case
temperature
Figure 4. Junction capacitance versus
reverse voltage applied
(typical values)
Characteristics STPSC806
4/8 Doc ID 16286 Rev 3
Figure 7. Total capacitive charge versus dIF /dt (typical values)
Figure 5. Relative variation of thermal
impedance junction to case
versus pulse duration
Figure 6. Non-repetitive peak surge forward
current versus pulse duration
(sinusoidal waveform)
STPSC806 Package information
Doc ID 16286 Rev 3 5/8
2 Package information Epoxy meets UL94, V0 Cooling method: convection (C) Recommended torque value: 0.4 to 0.6 N·m
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOP ACK®
specifications, grade definitions and product status are available at: .
ECOPACK® is an ST trademark.
Table 6. TO-220AC dimensions
Package information STPSC806
6/8 Doc ID 16286 Rev 3
Figure 8. Footprint (dimensions in mm)
Table 7. D2 PAK dimensions
