STPS80L15TV ,Schottky RectifierFEATURES AND BENEFITSVERY LOW DROP FORWARD VOLTAGE FORA2LESS POWER DISSIPATION AND REDUCEDHEATSINKI ..
STPS80L30CY ,LOW DROP POWER SCHOTTKY RECTIFIERapplications.ABSOLUTE RATINGS (limiting values, per diode)Symbol Parameter Value UnitV Repetitive p ..
STPS80L60CY ,POWER SCHOTTKY RECTIFIERapplications.ABSOLUTE RATINGS (limiting values, per diode)Symbol Parameter Value UnitV Repetitive p ..
STPS8H100D ,HIGH VOLTAGE POWER SCHOTTKY RECTIFIERSTPS8H100D/F/G/R/FP®HIGH VOLTAGE POWER SCHOTTKY RECTIFIERMAIN PRODUCT CHARACTERISTICSI 8AF(AV)V 100 ..
STPS8H100FP ,HIGH VOLTAGE POWER SCHOTTKY RECTIFIERFEATURES AND BENEFITSSTPS8H100DSTPS8H100Fn Negligible switching lossesKn High junction temperature ..
STPS8L30B ,LOW DROP POWER SCHOTTKY RECTIFIERAPPLICATIONSHIGH POWER SURFACE MOUNT MINIATUREPACKAGEDESCRIPTIONSingle Schottky rectifier suited to ..
T14L1024N , 128K X 8 HIGH SPEED CMOS STATIC RAM
T14L1024N , 128K X 8 HIGH SPEED CMOS STATIC RAM
T14M256A , 32K X 8 HIGH SPEED CMOS STATIC RAM
T14M256A-8J , 32K X 8 HIGH SPEED CMOS STATIC RAM
T15M256A , 32K X 8 LOW POWER CMOS STATIC RAM
T15M256A , 32K X 8 LOW POWER CMOS STATIC RAM
STPS80L15TV
Schottky Rectifier
STPS80L15TVJuly 1999 - Ed: 4A
LOW DROP OR-ing POWER SCHOTTKY DIODE
MAIN PRODUCT CHARACTERISTICSVERY LOW DROP FORWARD VOLTAGE FOR
LESS POWER DISSIPATION AND REDUCED
HEATSINK
INSULATED PACKAGE:
Insulated voltage = 2500 V(RMS)
Capacitance = 45 pF
FEATURES AND BENEFITSDual Schottky rectifier suited for Switched Mode
Power Supplies and DC to DC power converters.
Packaged in ISOTOPTM , this device is especially
intended for use as an OR-ing diode in fault
tolerant power supply equipments.
DESCRIPTION
ABSOLUTE RATINGS (limiting values, per diode) ISOTOP is a trademark of STMicroelectronics
* : dPtot
dTj < 1
Rth(j−a) thermal runaway condition for a diode on its own heatsink
1/4
THERMAL RESISTANCES
STATIC ELECTRICAL CHARACTERISTICS (per diode)Pulse test : * tp = 380 μs, δ < 2 %
To evaluate the conduction losses use the following equation :
P = 0.19 x IF(AV) + 3.25 10-3 x IF2 (RMS) 5 10 15 20 25 30 35 40 450
PF(av)(W)
Fig. 1: Average forward power dissipation versusaverage forward current (per diode). 25 50 75 100 1250
IF(av)(A)
Fig. 2: Average forward current versus ambient
temperature (δ=1, per diode).
STPS80L15TV2/4
1E-3 1E-2 1E-1 1E+00
500
IM(A)
Fig. 3: Non repetitive surge peak forward currentversus overload duration (maximum values, per
diode).
1E-4 1E-3 1E-2 1E-1 1E+00.0
Zth(j-c)/Rth(j-c)
Fig. 4: Relative variation of thermal impedance
junction to case versus pulse(per diode).123456789 1011121314151E-1
1E+0
1E+1
1E+2
1E+3
IR(mA)
Fig. 5: Reverse leakage current versus reverse
voltage applied (typical values, per diode). 5 10 201
C(nF)
Fig. 6: Junction capacitance versus reversevoltage applied (typical values, per diode). 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.81.0
IFM(A)
Fig. 7: Forward voltage drop versus forward
current (per diode).
STPS80L15TV3/4
. consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 1999 STMicroelectronics - Printed in Italy - All rights reserved.
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia
Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
http://
PACKAGE MECHANICAL DATAISOTOP
Cooling method: by conduction (C)
Recommended torque value: 1.3 N.m.
Maximum torque value: 1.5 N.m.
Epoxy meets UL94,V0
STPS80L15TV4/4
:
www.ic-phoenix.com
.
